Influence of defect generation processes in CdIn2S4 single crystals on the photoluminescence and Raman scattering spectra

Abstract

Photoluminescence (PL) and Raman scattering (RS) spectra obtained in CdIn2S4 single crystals in dependence of the applied heat treatment conditions are studied. The possibility is considered to explain the deformation of the integral PL spectrum by a model within which the local levels are due to the intrinsic defects of the ternary semiconductor. The presence of a wide‐band background in the RS spectra and the evident deformation of the PL spectra characteristic for sample subjected to a rapid cooling after annealing at temperatures not lower than Tc ≈︁ 300 to 320 °C are interpreted as being the result of a phase transition of the order‐disorder type. The latter occurs at T ≈︁ Tc and causes the conversion of the CdIn2S4 crystal structure from a normal spinel (T < Tc) into a partially inverted one (T > Tc ≈︁ 320 °C).

Electric Quadrupole Interaction in the CdIn2S4 Spinel Compound Studied by111In(111Cd)-PAC: Experiment and Theory

“…Its optical and electrical properties have been intensively investigated in the past. The results demonstrate peculiar characteristics due to the presence of native defects, the configuration and concentration of which strongly depend on crystal growth conditions and may be varied by subsequent thermal treatments [1].…”

“…Its optical and electrical properties have been intensively investigated in the past. The results demonstrate peculiar characteristics due to the presence of native defects, the configuration and concentration of which strongly depend on crystal growth conditions and may be varied by subsequent thermal treatments [1].We used the perturbed g±g angular correlation (PAC) method [2] to determine the hyperfine interaction of 111 In( 111 Cd) probe nuclei. The measured electric field gradient (EFG) reflects the local charge distribution including lattice symmetry, defect configurations, different phases and dynamic processes.…”

Band gap control via tuning of inversion degree in CdIn2S4 spinel

“…The band gap of pure CdIn 2 S 4 is indirect and values between 2.1 eV and 2.4 eV (between 2.5 and 2.7 eV for the direct gap) have been reported by different authors [5]. The electronic and optical properties of the system at room temperature seem to depend on whether the crystal is annealed or quenched from the synthesis temperature, which is possibly related to changes in the cation distribution [6].…”

“…In the latter case, the slow cooling will allow the equilibration of the cation distribution at lower temperatures. Experimental studies have indeed shown a variation in the electronic and optical properties of CdIn 2 S 4 with the cooling rate after synthesis [6].…”

“Scission–template–transportation” route to controllably synthesize CdIn2S4 nanorods

“…The results demonstrate peculiar characteristics due to the presence of native defects, the configuration and concentration of which strongly depend on crystal growth conditions which may be varied by subsequent thermal treatments. 11 Considerable progress has been made in the synthesis of ternary semiconductor crystallites. 12,13 However, these traditional solid-state reaction methods customarily require elevated processing temperatures (800-1000 uC), long reaction times, and special apparatus; furthermore, vacancies or interstitial defects in the chalcopyrite lattice cause these compounds to have poor crystal quality and poor optical transparency.…”