Photoluminescence investigation of residual shallow acceptors in Al<i>x</i>Ga1−<i>x</i>As grown by metalorganic vapor phase epitaxy

Mircea-Roussel, A.; Briere, A.; Hallais, J.; Vink, A.T.; Veenvliet, Hendrik

doi:10.1063/1.331215

Cited by 32 publications

(3 citation statements)

References 22 publications

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“…The peak at 1.492 eV corresponds to the C acceptor-free electron recombination (C°, e) and the one at 1.490 eV to the donor-acceptor pair recombination (C°, D°) [22]. On the sample grown at 630 OC a peak at 1.487 eV appears, it corresponds to (Zn°, e) recombination [23] (on some detailed spectra, not reported here, Mg related peaks appeared too). For the sample grown at 730 OC, near band gap excitonic complexes (A°, X) at 1.512 eV and (D+, X) or (D°, h) at 1.513 b eV are observed.…”

Section: Growth Of Gaas Layers With Excess Ch4mentioning

confidence: 61%

Residual impurities in MO-VPE GaAs epitaxial layers

Jani

Grenet

Leroux

et al. 1984

Rev. Phys. Appl. (Paris)

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The nature and concentration of residual impurities in MO-VPE GaAs layers were studied as a function of growth parameters : temperature, ratio As/Ga, excess CH4 in the gas phase. Photoluminescence (PL) spectra show that the main residual impurity is C. The amount of residual C increases with excess CH4. A PL peak at 1.477 eV appears for samples annealed under AsH3. The properties of this peak are interpreted in terms of a 40 meV deep acceptor, not related to germanium

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Section: Growth Of Gaas Layers With Excess Ch4mentioning

confidence: 61%

Residual impurities in MO-VPE GaAs epitaxial layers

Jani

Grenet

Leroux

et al. 1984

Rev. Phys. Appl. (Paris)

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“…7 We see that the calculated values of E Ge are a very poor fit to the data, particularly for higher aluminum composition. tive-mass calculation.…”

Section: Methodsmentioning

confidence: 78%

Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid-phase epitaxy

Yuan

Mohammed

Merz

1985

Journal of Applied Physics

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The photoluminescence of Ge-doped AIx Gal _ x As and Sn-doped GaAs were investigated at 1.4 K. The ionization energy of Ge is strongly dependent on the AI composition in AIGaAs, and is in very poor agreement with the effective mass value. The ionization energy of Sn was found to be 11.0 me V in contrast with previously reported values. We also report a Sn acceptor bound excitation line at 1.507 e V in Sn-doped GaAs, and a broad luminescence band peaking at -1.5 e V in Ge-doped AlGaAs. Yuan, Mohammed, and Merz 2899 [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.160.

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“…The depth and lateral resolution, experimentally achieved in measurements along the surface of the bevelled structures, ensure the reliability of information on the alloy system (for more details see Oelgart et al (1987)).…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of Zn-doped Al_xGa_1-xAs

Oelgart

Heilmann

Schwabe

1989

Semicond. Sci. Technol.

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Spatially resolved experiments have been performed on the luminescence of bevelled AlxGa, -xAs structures as a function of the alloy composition. The binding energy of the isolated zinc-acceptor, €2". with respect to the valence band edge, is determined for 0 6 x 6 0.4 and obeys the relation €:"(x) = 30.7 + 4 9 5 ~2 . ~8 (E:" in meV). The radiative decay of free excitons is observed in the range 0.1 6 < x 6 0.42 at T = 38 K. While in the direct gap region t h e exciton binding energy slowly increases with increasing x the change in the behaviour of the free excitons is rather abrupt as one goes from the direct to the indirect-gap alloys, as is expected under the supposition of very weak coupling between r and X exciton states. The donor ionisation energy was obtained in t h e range of AI content 0.25 < x < 0.42 by analysing the radiative decay of free holes with electrons bound to donors at T = 80 K. The donor depth passes a maximum of about 60 meV near the direct-to-indirect gap transition of the alloy system and an effective-mass like value associated with the r minimum of the conduction band can be expected for x < 0.25.

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Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy

Cited by 32 publications

References 22 publications

Residual impurities in MO-VPE GaAs epitaxial layers

Residual impurities in MO-VPE GaAs epitaxial layers

Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid-phase epitaxy

Photoluminescence of Zn-doped Al_xGa_1-xAs

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Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy

Cited by 32 publications

References 22 publications

Residual impurities in MO-VPE GaAs epitaxial layers

Residual impurities in MO-VPE GaAs epitaxial layers

Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid-phase epitaxy

Photoluminescence of Zn-doped AlxGa1-xAs

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Photoluminescence of Zn-doped Al_xGa_1-xAs