2005
DOI: 10.1016/j.physe.2004.10.011
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Photoluminescence investigation of CdSe quantum dots and the surface state effect

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Cited by 43 publications
(23 citation statements)
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“…It is known to all that the passivation of surface layer plays a vital role in improving the FL efficiency of QDs (3,6,29). Therefore, the changes of the surface situation will greatly affect the FL properties of QDs.…”
Section: The Mechanism Of Reaction Between Thiols and Cdse Qdsmentioning
confidence: 99%
“…It is known to all that the passivation of surface layer plays a vital role in improving the FL efficiency of QDs (3,6,29). Therefore, the changes of the surface situation will greatly affect the FL properties of QDs.…”
Section: The Mechanism Of Reaction Between Thiols and Cdse Qdsmentioning
confidence: 99%
“…For this range of the quantum dot sizes the authors obtained the values of the FWHM about 115 meV, which appears to be much larger that it is measured in the other experiments [7,8]. The data given in the reference [12] do not allow us so far to see whether the approximate dependence W (d) = λ/d is supported by the measured data. More measurements of the linewidths of the optical features is needed.…”
Section: Numerical Results For Inas and Cdse Quantum Dotsmentioning
confidence: 70%
“…[12] in a range of the quantum dot diameters close to about 6 nm. For this range of the quantum dot sizes the authors obtained the values of the FWHM about 115 meV, which appears to be much larger that it is measured in the other experiments [7,8].…”
Section: Numerical Results For Inas and Cdse Quantum Dotsmentioning
confidence: 94%
“…Moreover, FWHM of samples S1 and S2 are larger than 200 meV, which is far larger than that of ordinary bulk semiconductor sample. The main reason of this phenomenon is the size fluctuation of the quantum dots [32]. There is a splitting of the emission maximum observed in sample S3 and this may be due to the recombination through surface defect states.…”
Section: Optical Propertiesmentioning
confidence: 96%