2015
DOI: 10.1364/ol.40.005711
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Photoluminescence from voids created by femtosecond-laser pulses inside cubic-BN

Abstract: Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of ∼ 4 ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earlier in high energy electron irradiated and ion-implanted c-BN. These, formerly known as the radiation centers, RC1, RC2,… Show more

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Cited by 34 publications
(20 citation statements)
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“…The misalignment between the excitation and the emission polarizations is likely due to redistribution of the excited electronic states. Next, we characterize flakes that were processed using an ultrafast pulsed laser operated at a power just below the threshold for rapid ablation 31 . Ultra-short laser pulses are efficient sources of free electron acceleration due to high peak intensities.…”
Section: Figure 3 (A) a Table Comparing The Number Of Formed Emittermentioning
confidence: 99%
“…The misalignment between the excitation and the emission polarizations is likely due to redistribution of the excited electronic states. Next, we characterize flakes that were processed using an ultrafast pulsed laser operated at a power just below the threshold for rapid ablation 31 . Ultra-short laser pulses are efficient sources of free electron acceleration due to high peak intensities.…”
Section: Figure 3 (A) a Table Comparing The Number Of Formed Emittermentioning
confidence: 99%
“…By using critical point drying (CPD), which allows the elimination of capillary forces in the wet development of laser exposed polymers, it is now possible to reliably fabricate 3D structures with 100 nm structural units in 3D, as demonstrated for photonic crystals [26]. Another recent example, in which focused ultra-short laser pulses are used is controllable formation of defects inside the volume of crystals to engineer single photon emitters [27] or to tailor the photo-conductivity of dielectrics for the THz band [28,29]. However, versatile 3D material shaping at the nanoscale of 1−100 nm using 3D-confined light absorption as the energy source is still a highly challenging task for practical applications.…”
Section: Towards 3d Nano-fabricationmentioning
confidence: 99%
“…As it is generally known, laser radiation can work as an effective tool for creating luminescent defects or color centers in different materials. [ 61,62 ] In silicon, defects demonstrate luminescence in the near‐IR range at cryogenic temperatures. [ 63 ] Therefore, the observed features can be attributed to the fine structure of optical transitions between sub‐levels of 4 I 15/2 and 4 I 13/2 for an erbium ion surrounded by the crystalline silicon phase.…”
Section: Figurementioning
confidence: 99%