Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy

Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy

“…However, can be seen that the emission is weaker when compared to the InAs DH control sample which has a 2 µm thick InAs active region. In both cases no EL emission was seen from the InAsSbP barriers (and i-region), although it was evident in the PL of figure 2 and also in the PL of a sample with the same well width which we reported on previously [14]. The fact that no recombination is seen in the EL indicates that the carriers injected from both sides are effectively captured within the InAs well or at the interfaces where they recombine.…”

“…The epitaxial layers were grown in a Pd-diffused H 2 ambient in a horizontal liquid phase epitaxial growth reactor, using a special graphite boat with some of the conventional melt chambers modified so that the base of the chamber formed a narrow slit, the details of which have been described previously elsewhere [13,14]. A linear motor (Linear Drives Ltd) was used to slide the substrate under the melt chambers in the required sequence to build up the desired epitaxial structure.…”

Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy

“…The formation of PbSe QDs in the patterned or rough region could be due to the substrate first being etched back followed by re-growth during the rapid sliding process. The room temperature lattice constant and melting point of GaSb are a(GaSb) = 6.0954 Å and T m = 707˚C, respectively, whereas for Ga 2 Se 3 , these values are a(Ga 2 Se 3) = 5.429 Å and T m = 1020˚C, respectively [17][18][19][20][21]. Sb 2 Se 3 has a relatively low melting point of T m = 617˚C compared with GaSb and Ga 2 Se 3 .…”

“…Therefore, GaSb and Ga 2 Se 3 should form a low melting point pseudo-binary liquid. On the other hand, the PbSe rocksalt structure has a lattice constant a(PbSe) = 6.1243 Å close to that of GaSb, and a high melting point T m = 1020˚C [17][18][19][20][21]. So, when a supercooled Pb-rich PbSe melt contacts the GaSb substrate, a low melting point GaSb-Ga 2 Se 3 layer may be formed in the interface region before the higher melting point PbSe is grown, which could perhaps result in etch-back.…”

“…However, with appropriate boat modifications it is also possible to use LPE to grow multilayer III-V structures, which exhibit quantum size effects. Earlier, in our laboratory, we used a modified 'rapid slider' LPE technique to decrease the melt-substrate contact time, which successfully enabled the growth of InAsbased quantum structures [18,19]. We then extended this by increasing the lattice-mismatch to realize the growth of self-assembled InAs 0.75 Sb 0.25 QDs on InAs(100) [10].…”