Photoluminescence from heavy-hole and light-hole excitons split by thermal strain in CuI thin films

Tanaka, I.; Kim, D; Nakayama, Masaaki; Nishimura, Hitoshi

doi:10.1016/s0022-2313(99)00293-8

Cited by 21 publications

(16 citation statements)

References 5 publications

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“…4, it is found that the maximum transmittance in the visible regions is 87.3% when the substrate temperature is kept at 110°C. Our results agree with the value obtained for the films prepared by radio-frequency direct-current (rf-dc) sputtering by Tanaka et al [12]. Fig.…”

Section: Optical Characteristicssupporting

confidence: 93%

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Yan

Zhou

et al. 2011

Rare Metals

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γ-CuI thin films were prepared by a spraying method using acetonitrile as a solvent, CuI and iodine as reagents. The influences of substrate temperature on the structure, topography, and optical properties of CuI films were investigated. Scanning electron microscope (SEM) photos revealed that the shape and grain size of CuI grains were related to substrate temperature. X-ray diffraction results showed that substrate temperature affected the crystalline quality of CuI films. When the substrate temperature was 110°C, CuI thin films showed γ-phase zinkblende structure with (111) preferred orientation. The dimension of the globular CuI crystallite was approximately 35 nm, the energy band gap was 2.97 eV, the maximum transmittance was 87.3% in the part of the visible region, and the open circuit voltage was close to 380 mV. This opened a route for a cadmium-free buffer layer for CuInS 2 solar cells.

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Section: Optical Characteristicssupporting

confidence: 93%

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Yan

Zhou

et al. 2011

Rare Metals

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“…The hh‐ and lh‐exciton energy shifts due to the in‐plane strain

ϵ_{| |}

are found to be

Δ E_{hh} = 0.08 eV ϵ_{| |}

and

Δ E_{lh} = - 2.8 eV ϵ_{| |}

(for (111)‐oriented films). Strain on (0001) Al 2 O 3 and quartz is found tensile, on NaCl and KCl compressive.…”

Section: Optical Properties Of Cuimentioning

confidence: 93%

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

242

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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“…At a low measurement temperature, typically, a doublet‐term Z 1,2 can be observed, reflecting the band–band transitions of the two top valence bands, namely the heavy and light hole band. [ 10 ] The strain‐induced splitting of Z 1 – Z 2 depending on temperature was observed in PL and absorption spectra. [ 5 ] Such a band structure brings advantages to the transport properties of p‐type transparent CuI thin films.…”

Section: Figurementioning

confidence: 99%

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Benndorf

Jiang

et al. 2020

Physica Rapid Research Ltrs

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Optical absorption and emission spectra are the important quantifiable properties for CuI as a promising optoelectronic material. Previous research on the sputter deposition of CuI focuses on room‐temperature growth. Herein, the effect of growth temperature on the selected optical features of sputtered CuI thin films is investigated. An enhanced visible light transparency and a steeper absorption edge are achieved for CuI thin films by optimizing the growth temperature. The PL intensity ratio of free exciton to defect‐related emission increases with increasing substrate temperature. These results suggest a strategy of growth temperature optimization for the enhanced absorption and emission of CuI for advanced optoelectronic applications.

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Photoluminescence from heavy-hole and light-hole excitons split by thermal strain in CuI thin films

Cited by 21 publications

References 5 publications

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Microstructure and optical properties of sprayed γ-CuI thin films for CuInS2 solar cells

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

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