Control of Optical Absorption and Emission of Sputtered Copper Iodide Thin Films

Abstract

Optical absorption and emission spectra are the important quantifiable properties for CuI as a promising optoelectronic material. Previous research on the sputter deposition of CuI focuses on room‐temperature growth. Herein, the effect of growth temperature on the selected optical features of sputtered CuI thin films is investigated. An enhanced visible light transparency and a steeper absorption edge are achieved for CuI thin films by optimizing the growth temperature. The PL intensity ratio of free exciton to defect‐related emission increases with increasing substrate temperature. These results suggest a strategy of growth temperature optimization for the enhanced absorption and emission of CuI for advanced optoelectronic applications.

A 1D Cu(i)–I-pyrazine coordination polymer with controlled pressure-induced phase transition and opto-electronic response depending on mechanical stimuli, temperature, and CuI content

“…In addition, apart from a building block, copper iodide (CuI) can act as a dopant agent due to its excellent optoelectronic and thermoelectric properties, given its p-type conductivity. [34][35][36][37] In this way, we can obtain [CuI(PyzBr)] n chains through two very simple synthetic pathways that will allow us to control the presence of CuI in the obtained compound. 20 Namely, solventfree mechanical synthesis allows obtaining [CuI(PyzBr)] n in the form of polycrystals with a percentage of CuI of 2.5% whereas recrystallization of the polycrystals in acetonitrile enables the formation of [CuI(PyzBr)] n single crystals.…”

“…In addition, apart from a building block, copper iodide (CuI) can act as a dopant agent due to its excellent optoelectronic and thermoelectric properties, given its p-type conductivity. 34–37…”

Hierarchically Interlaced 2D Copper Iodide/MXene Composite for High Thermoelectric Performance

“…[9][10][11] These advanced properties of copper iodide are attributed to light holes with an effective mass of 0.3m 0 and zinc blende-type structure. [12] Copper iodide thin film holds the largest figure of merit for transparent thermoelectric thin films with 0.22. [13] Facile and easy synthesis and fabrication of copper iodide materials make them practically ideal for the thermoelectric power conversion process.…”

Ni‐Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance

“…The growth of the thin films was conducted at 2 Â 10 À2 mbar [24,25] for either 4 or 8 min and a constant electrical power at the Cu target of P DC ¼ 90 W. The optimal adjustments for homogeneous growth and desired crystallinity at an appropriate growth rate were determined to p I 2 ¼ 4 Â 10 À3 mbar for the iodine partial pressure and RT as deposition temperature. The electrical power at the Ni target was varied from 2 to 70 W and between direct current (DC) and radio frequency (RF) mode, to result in Ni x Cu 1Àx I thin films with varying Ni contents x.…”