Photoluminescence-excitation-spectroscopy studies in spontaneously orderedGaInP2

Birefringence in ordered (Al)GaInP

“…1͒ of the group III components along ͕111͖ B planes 1-3 grown by metalorganic vapor phase epitaxy ͑MOVPE͒, the most familiar consequences are the reduced band gap and the splitting of the valence bands. 4,5 This is well understood by using the approach of Zunger and Wei 6,7 to include ordering into the Luttinger-Kohn Hamiltonian. Using kp methods, the modified band structure near the band gap is obtained and a calculation of optical gain may be performed.…”

“…19,20,5,21 At the band gap the spontaneous emission in the ͓011͔ direction is nearly linear polarized in the direction of the ordering planes in pure waveguide samples or samples with unstrained quantum wells ͑see Fig. 4͒.…”

Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth inGaxIn1−xZhang1, Mascarenhas2, Smith3 et al. 2000Phys. Rev. BSelf Cite

“…The statistical effects referred to are those intrinsic to ordering and which are unrelated to imperfections in sample growth. For example, phenomena associated with the macroscopic spatial variations of the alloy composition or the order parameter 16,17 are considered to be growth related imperfections that can in principle be eliminated or minimized by improving the growth technique. It is well known that the influence of alloy statistical fluctuations on many physical properties is a function of the alloy composition x, that is frequently described by a simple function x(1Ϫx).…”

Photocurrent polarization in long-range ordered Ga0.5In0.5P

“…[1][2][3][4][5][6][7][8][9][10] The long-range ordering of the column III sublattice appears in Ga 0.5 In 0.5 P epitaxial films grown on GaAs ͑001͒ by organometallic vapor-phase epitaxy ͑OM-VPE͒. The epitaxial alloys consist of two ordered phases that show the CuPt-like ordering along the ͓111͔ and ͓111͔, i.e., ͓111͔ and ͓111͔ monolayer superlattices ͑MSLs͒.…”

“…[8][9][10] The PLE spectra show anisotropic optical absorptions originated from the valence-band splitting. For applications of such anisotropic properties near the band gap into optoelectronic devices, it is important to investigate properties of photocurrent ͑PC͒ responses in ordered Ga 0.5 In 0.5 P. The PC response is not only a function of absorption coefficient, but also of electronic structure of the junction and transport properties of photoexcited carriers.…”