Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure

Abstract

Low-temperature photoluminescence (PL) spectra of electron-hole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was maximized at 400 °C for each NW type, which are consistent with previous reports. Our results confirmed that the micro-PL demonstrated here is one of the important methods for characterizations of the interface defects in Si NWs.

Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching

“…However, at the lab level, due to the resolution limit of the topdown lithography and etching processes, direct and reliable fabrication of silicon nanostructures with sub-10 nm features is still challenging. To obtain the tiniest possible silicon structures, in most research relatively large silicon nanostructures are firstly fabricated and then an oxidization process is used to shrink the silicon nanostructures [1,12], with which structures down to sub-10 nm scale could be achieved. Nevertheless, in practice, the oxidization shrinking reduces the reliability of fabrication at the single nanometer scale.…”