Photoluminescence characteristics of soft PZT 53/47 ceramic doped at A and/or B sites

Durruthy-Rodríguez, M. D.; Gervacio-Arciniega, J. J.; Hernández-García, M.; Yáñez‐Limón, J. M.

doi:10.1007/s40145-018-0262-8

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…The first simultaneous use of photovoltaic and piezoelectric effects, the photostrictive phenomenon, has been observed with a PLZT composition. PLZT usually exhibits a band gap of around 3 eV with a d 33 of about 350 pC/N (Bavbande et al, 2012;Bai et al, 2018a;Durruthy-Rodríguez et al, 2018). The violet-range band gap and relatively large d 33 explain why the photostriction was firstly observed with PLZT.…”

Section: Wide Band Gap Piezoelectricsmentioning

confidence: 99%

“…In addition, in KNBNZNO Ni 2+ was added individually without associated Ba 2+ , which might eliminate the negative effect of Ba 2+ on the ferroelectricity and thus piezoelectricity as presented above. (Yue and Yi-jian, 2003;Bavbande et al, 2012;Kumar and Kim, 2012;Mamoun et al, 2013;Bowen et al 2014;Paillard et al, 2016;Wu et al (2016); Bai et al, 2017a, Bai et al, 2018aDurruthy-Rodríguez et al, 2018;Xiao et al (2019a); Zhong et al 2019;Lou et al, 2019).…”

Section: Ni-doped Knn-based Compositions (Knbnno and Knbnzno)mentioning

confidence: 99%

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Photoresponsive Piezoelectrics

Bai

2021

Front. Mater.

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Most piezoelectric materials are not interactive with visible light, meaning that their band gaps are beyond the photon energies of the visible part of the light spectrum. The first narrow band gap (1.1 eV, the same as silicon) ferroelectric material based on the oxide perovskite structure has been achieved by doping Ni on the B-sites of KNbO3 and paring the Ni2+ ions with oxygen vacancies to form defect dipoles to ease the band-band transition. This band gap engineered ferroelectric material has also been proved to be piezoelectric. The Ni-doping strategy for band gap engineering has been successfully applied to other perovskite compositions. As a result, several materials with simultaneously good piezoelectricity and a visible-range band gap have been developed. Such photoresponsive piezoelectrics have potential applications in opto-electrical dual-source actuators, single-material multi-sensors and multi-source energy harvesters. This mini review focuses on the works of simultaneous tuning of piezoelectricity and band gap, which have not previously been discussed as an individual topic in existing reviews. Pioneer works on the applications of photoresponsive piezoelectrics are also presented. Since most of such materials are built on the frame of lead-free perovskite oxides, their band gap (without degrading the piezoelectricity) provides an additional benefit to environmentally friendly lead-free piezoelectrics (compared to lead-based counterparts such as PZT [Pb(Zr,Ti)O3)]. This review aims to draw the attention of piezoelectric scientists and device engineers, so that potential applications of photoresponsive piezoelectrics can be comprehensively investigated, as well as more material options that can be offered in future works.

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Section: Wide Band Gap Piezoelectricsmentioning

confidence: 99%

Section: Ni-doped Knn-based Compositions (Knbnno and Knbnzno)mentioning

confidence: 99%

Photoresponsive Piezoelectrics

Bai

2021

Front. Mater.

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“…Recently, optoelectronic multifunctional materials combining with piezo-/ferroelectric and luminescent features have attracted considerable attention by virtue of their potential electrical-optical coupling applications, such as data storage, power generation optical telecommunication, and remote sensing [1][2][3][4][5]. Over the past 60 years, lead-based Pb(Zr 1-x Ti x )O 3 (PZT) ceramics have governed the market of piezoelectric materials and devices.…”

Section: Introduction mentioning

confidence: 99%

Enhanced ferro-/piezoelectric properties of tape-casting-derived Er3+-doped Ba0.85Ca0.15Ti0.9Zr0.1O3 optoelectronic thick films

Lin

et al. 2020

J Adv Ceram

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Er 3+-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 (xEr-BCTZ, x = 0, 0.005, 0.01, 0.015) multifunctional thick films were prepared by the tape-casting method, using sol-gel-derived nano-sized powders as the matrix material. The surface morphologies, photoluminescence, and electrical properties were investigated. Dense microstructures with pure perovskite structure were obtained in the thick films. By doping an appropriate amount of Er 3+ , the samples exhibit superior up-conversion photoluminescence performance and simultaneously enhanced electrical performances. In addition, relatively higher texture fractions (with the largest value of 83.5%) were realized through introducing plate-like BaTiO 3 templates to make the thick film grow by the [001] c orientation. And the ferro-/piezoelectric properties of the thick films were further improved, showing potential in the applications of micro-optoelectronic devices.

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Reflection and thermal characteristics of a novel reflective phase-change coating irradiated by high-power continuous laser

Yang

Zhang

et al. 2022

Ceramics International

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Photoluminescence characteristics of soft PZT 53/47 ceramic doped at A and/or B sites

Cited by 8 publications

References 23 publications

Photoresponsive Piezoelectrics

Photoresponsive Piezoelectrics

Enhanced ferro-/piezoelectric properties of tape-casting-derived Er3+-doped Ba0.85Ca0.15Ti0.9Zr0.1O3 optoelectronic thick films

Reflection and thermal characteristics of a novel reflective phase-change coating irradiated by high-power continuous laser

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