2020
DOI: 10.1007/s40145-020-0405-6
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Enhanced ferro-/piezoelectric properties of tape-casting-derived Er3+-doped Ba0.85Ca0.15Ti0.9Zr0.1O3 optoelectronic thick films

Abstract: Er 3+-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 (xEr-BCTZ, x = 0, 0.005, 0.01, 0.015) multifunctional thick films were prepared by the tape-casting method, using sol-gel-derived nano-sized powders as the matrix material. The surface morphologies, photoluminescence, and electrical properties were investigated. Dense microstructures with pure perovskite structure were obtained in the thick films. By doping an appropriate amount of Er 3+ , the samples exhibit superior up-conversion photoluminescence performance and… Show more

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Cited by 23 publications
(14 citation statements)
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“…BaM-based cationic substitutions for Fe 3+ are used to modify the dielectric and magnetic parameters, which play an important role in RL calculation. The substitutions for Fe 3+ of BaM-based can be divided into two main approaches: covalent cation substitution, such as Ga 3+ , In 3+ ; and Er 3+ and hetervalent cationic combination, such as Co 2+ -Ti 4+ , Co 2+ -Zr 4+ , and Ni 2+ -Ti 4+ [22][23][24][25][26]. However, recent studies have shown that the introduction of high-valence ions destroys the valence state equilibrium of barium ferrite, resulting in multiple absorption peaks, which can increase the bandwidth of electromagnetic wave absorption of the material [27][28][29].…”
Section: Introduction mentioning
confidence: 99%
“…BaM-based cationic substitutions for Fe 3+ are used to modify the dielectric and magnetic parameters, which play an important role in RL calculation. The substitutions for Fe 3+ of BaM-based can be divided into two main approaches: covalent cation substitution, such as Ga 3+ , In 3+ ; and Er 3+ and hetervalent cationic combination, such as Co 2+ -Ti 4+ , Co 2+ -Zr 4+ , and Ni 2+ -Ti 4+ [22][23][24][25][26]. However, recent studies have shown that the introduction of high-valence ions destroys the valence state equilibrium of barium ferrite, resulting in multiple absorption peaks, which can increase the bandwidth of electromagnetic wave absorption of the material [27][28][29].…”
Section: Introduction mentioning
confidence: 99%
“…High ε r dielectrics are preferred for capacitors and there are some promising lead-based ceramics that have a high ε r value in the range of 10,000-25,000, such as Pb(Fe 1/3 W 2/3 )O 3 , Pb(Mg 1/3 Nb 2/3 )O 3 and Pb(Zn 1/3 Nb 2/3 )O 3 but lead is considered toxic and hazardous to human health [16][17][18][19][20][21][22][23]. Therefore, the use of lead is constrained by the European Union.…”
Section: Introductionmentioning
confidence: 99%
“…The substitutions for Fe 3+ of BaM-based can be divided into two main approaches: covalent cation substitution such as Ga 3+ , In 3+ , and Er 3+ and hetervalent cationic combination such as Co 2+ -Ti 4+ , Co 2+ -Zr 4+ , Ni 2+ -Ti 4+ , and so on [10][11][12][13][14]. However, recent studies have shown that the introduction of high-valence ions destroys the valence state equilibrium of barium ferrite, resulting in multiple absorption peaks, which can increase the bandwidth of electromagnetic wave absorption of the material [15,16].…”
Section: Introductionmentioning
confidence: 99%