2013
DOI: 10.1016/j.proeng.2013.03.189
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Photoluminescence Characteristics of Silicon Quantum Dots Nanoparticles (SQDNs) Embedded on Glass Surface

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Cited by 4 publications
(3 citation statements)
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“…The Si 3 N 4 matrix allows a considerable reduction in the electron/hole injection barriers at the Si/Si 3 N 4 interfaces which improve the electrical stability of devices. Also, several authors have showed that photoluminescence (PL) peaks from Si NCs embedded in Si 3 N 4 are more blue shifted than those confined in the SiO 2 matrix [11, 12]. Another dielectric for growing Si-QD is SiC.…”
Section: Introductionmentioning
confidence: 99%
“…The Si 3 N 4 matrix allows a considerable reduction in the electron/hole injection barriers at the Si/Si 3 N 4 interfaces which improve the electrical stability of devices. Also, several authors have showed that photoluminescence (PL) peaks from Si NCs embedded in Si 3 N 4 are more blue shifted than those confined in the SiO 2 matrix [11, 12]. Another dielectric for growing Si-QD is SiC.…”
Section: Introductionmentioning
confidence: 99%
“…Quantum dots are semiconductor whose conducting characteristic closely related to the size and shape of the individual crystal. Quantum dots also known as nanocrystals, are a special class of material known as semiconductor which are crystal composed of periodic group of II-IV, III-V or IV-VI materials [4]. Generally, the smaller the size of the crystal, the larger the band gap.…”
Section: Introductionmentioning
confidence: 99%
“…Quantum dots are unique class of semiconductor materials because they are so small, ranging from 2-10 nanometers in diameter. A quantum dost has a discrete quantized energy spectrum [4]. Introducing metallic quantum dots such as Ag, Au, and Cu into glass has been used for coloring glasses and recently fabricating optical devices [5][6][7].…”
Section: Introductionmentioning
confidence: 99%