Photoluminescence characteristics of NiS nanocrystallites embedded in sol–gel silica xerogel

Yang, Ping; Lü, Mengkai; Song, Chun; Zhou, Guangjun; Xü, Dong; Yuan, Duorong

doi:10.1016/s0022-3697(02)00192-0

Cited by 19 publications

(10 citation statements)

References 25 publications

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“…〈δ〉 = ∑ TC hkl × δ hkl ∑ TC hkl (11) The average values of the crystallites size, micro-stress and the dislocation density are…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…NiS exists in two phases: hexagonal structure (α-NiS) and rhombohedral structure (β-NiS). In literature thin films of NiS have been deposited by different methods such as spraypyrolysis [6], chemical bath deposition (CBD) [5], hydrothermal [7], successive ionic layer adsorption and reaction (SILAR) [8], thermal evaporation [9], electro-deposition [10] and sol-gel [11]. The present study deals with the synthesis and the characterization of the structural, optical, morphological and electrical properties of the α-NiS phase deposited by spray-pyrolysis at 325 °C.…”

Section: Introductionmentioning

confidence: 99%

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Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.

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“…〈δ〉 = ∑ TC hkl × δ hkl ∑ TC hkl (11) The average values of the crystallites size, micro-stress and the dislocation density are…”

Section: X-ray Diffractionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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show abstract

“…Both phases exhibit a many applications. Different methods such as spray pyrolysis [3] the deposition of the chemical bath (CBD) [4], hydrothermal [5], adsorption and reaction of successive ionic layer (SILAR) [6], thermal evaporation [7], electro-deposition [8] and sol-gel [9] have deposited the thin films of NiS. Since thin films are very important in industrial production, an easy and inexpensive method should be sought among the methods which have proven to be effective are the spray pyrolysis method, because they do not require advanced technologies and complex devices, but they need simple devices and access to films at low cost.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing time on the structural, morphological, optical and electrical properties of NiS thin films

Gahtar¹,

Benali²,

Benramache³

et al. 2022

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In this work, we prepared thin films of nickel sulfide by spray pyrolysis on substrates of the glass at temperature of 300°C. The solution used is a mixture of nickel acetate and thiourea as a source of nickel and sulfur respectively, acetic acid was used as a complexing agent, and then heated the resulting layers in an ordinary furnace at 300°C at different times of 1h, 2h and 3h to study the annealing time effect on the physical and chemical properties. The characterization methods used indicate remarkable changes in the structural, electrical, morphological and optical properties of NiS films under annealing time. The results obtained have shown that the prepared NiS films contain good crystallization, dense morphology, good stochiometric ratio and high conductivity, and these specifications make them a potential candidate as electrode material for application in super-capacitors.

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“…1,2 Nickel sulfide has attracted considerable attention because of its unique optical, magnetic, electrical and catalytic properties. 3,4 Nickel sulfide can be prepared by different methods, such as vapor phase reaction, 5 hydrothermal, 6 ultrasonic irradiation 7 and solvothermal. 8 A variety of compositions including NiS, NiS 2 , Ni 3+x S 2 , Ni 4 S 3+x , Ni 6 S 5 , Ni 9 S 8 , Ni 7 S 6 , Ni 3 S 4 and Ni 3 S 2 can be obtained by varying synthesis process.…”

Section: Introductionmentioning

confidence: 99%

Determination of density of states, conduction mechanisms and dielectric properties of nickel disulfide nanoparticles

Jamil

Batool²,

Sher

et al. 2016

AIP Advances

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Temperature and frequency dependent ac electrical measurements were used to explore density of states, conduction mechanisms and dielectric properties of nickel disulfide (NiS2) nanoparticles. The NiS2 nanoparticles were prepared by conventional one step solid state reaction method at 250 °C. X-ray diffraction (XRD) confirmed cubic phase of prepared nanoparticles. Scanning electron microscope (SEM) images revealed presence of irregular shaped nanoparticles as small as 50 nm. The ac electrical measurements were carried out from 300 K to 413 K. Two depressed semicircular arcs from 20 Hz to 2 MHz showed presence of bulk and grain boundary phases in NiS2 nanoparticles at all temperatures. Small polaron hopping conduction from 300 K to 393 K and correlated barrier hopping conduction mechanism at temperatures higher than 393 K was observed. High value of density of states (of the order of 1024 eV−1cm−3) was calculated from ac conductivity. At low frequencies high values (of the order of 104-107) of real part of dielectric constant (ε′) were observed at different temperatures. These observations suggest that NiS2 nanoparticles may find applications in electronic devices.

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Photoluminescence characteristics of NiS nanocrystallites embedded in sol–gel silica xerogel

Cited by 19 publications

References 25 publications

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Effect of annealing time on the structural, morphological, optical and electrical properties of NiS thin films

Determination of density of states, conduction mechanisms and dielectric properties of nickel disulfide nanoparticles

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