Photoluminescence at high pressures from highly strained MOVPE grown GaAs/GaSb/GaAs heterostructures

Abstract

We report photoluminescence measurements made on highly strained nominally GaAs/GaSb/GaAs heterostructures (grown by MOVPE) at pressures U to GaSb layer, and a five 15 A GaSb layer heterostructure. In both cases t h e 1.3 eV strained layer luminescence increased in energy with pressure with a large