Photoluminescence and X-ray diffraction analysis of In1−−Ga Al As/InP structures grown by molecular beam epitaxy

Yoon, Soon Fatt; Zhang, P.H.; Zheng, Hang

doi:10.1016/s0026-2692(97)00124-9

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“…The 23T full adder can be designed by the combination the pass transistor logic and transmission gate as it is shown in Figure 2. Two XOR and XNOR functions are used to generate outputs [16]. This logic style was also used to design the 18 transistor full adder.…”

Section: Previous Workmentioning

confidence: 99%

CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic

Hatefinasab¹

2016

J. Nano- Electron. Phys.

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This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology.

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Section: Previous Workmentioning

confidence: 99%