Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

Kornitzer, K.; Ebner, Tamara; Thonke, Klaus; Sauer, R.; Kirchner, C.; Schwegler, V.; Kamp, M.; Leszczyński, M.; Grzegory, I.; Porowski, S.

doi:10.1103/physrevb.60.1471

Cited by 228 publications

(157 citation statements)

References 8 publications

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“…1͒, what could be expected for nearly unstrained GaN. 15,11,16 Having this energy one can determine localization energies of the excitons bound to these donors as 7.9, 6.9, and 6.0 meV, respectively.…”

Section: Resultsmentioning

confidence: 88%

“…9͒ and in homoepitaxial layers grown on GaN single crystals. [10][11][12] The identification of the twoelectron line was confirmed by magneto-optical measurements. 13,14 However, the nature of the donor involved in the two-electron transitions has not been identified.…”

Section: Introductionmentioning

confidence: 70%

“…8 The two-electron transition in GaN has also been reported previously. [9][10][11] This transition has been detected in heteroepitaxial layers grown on Al 2 O 3 ͑Ref. 9͒ and in homoepitaxial layers grown on GaN single crystals.…”

Section: Introductionmentioning

confidence: 86%

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Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

et al. 2002

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The neutral donor bound exciton recombination processes in freestanding GaN have been studied. The photoluminescence spectrum shows emission lines related to silicon and oxygen donors. Time-resolved luminescence allows us to correlate the principal donor bound exciton lines with their two-electron satellites. The magnetic field splitting of the two-electron lines is well described by the theory of the hydrogen atom in a magnetic field. For the oxygen donor a 1.5 meV chemical shift and a 30.8 meV effective Rydberg have been evaluated. Two-electron satellites involving excitations to the 2p and 2s donor states are separated by an energy of 1.0 and 1.3 meV for O and Si impurity, respectively. The temperature dependence of the two-electron emission clearly shows that this separation arises from a splitting of the ground state of the neutral donor bound exciton complex. The nature of this splitting is discussed and it is suggested that it is due to rotational states of donor bound excitons.

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Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 70%

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Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

et al. 2002

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“…The doublet structure was tentatively interpreted as due to the internal coupling in the A 0 X complex. 22 In contrast, from their magneto-PL studies, Stepniȩwski et al 25 suggested that the two components of the A 0 X emission do not arise from the splitting of the initial state but from the neutral acceptor ground state instead. Such a conclusion comes from the analysis of the Zeeman splitting patterns at different angles between magnetic field orientation and the crystal c axis.…”

Section: Ganmentioning

confidence: 97%

“…The shallowest A 0 X state has a PL line at about 3.466 eV in unstrained GaN. 22 Its origin is an Mgrelated acceptor, 23 stable in n-GaN and having interesting properties in p-GaN ͑instability and metastability 19 ͒. The acceptor ground state appears to be approximately effectivemasslike, with a strong anisotropy of the bound hole g tensor.…”

Section: Ganmentioning

confidence: 99%

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

et al. 2010

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We describe the internal structure of acceptor-bound excitons in wurtzite semiconductors. Our approach consists in first constructing, in the context of angular momentum algebra, the wave functions of the two-hole system that fulfill Pauli's exclusion's principle. Second, we construct the acceptor-bound exciton states by adding the electron states in a similar manner that two-hole states are constructed. We discuss the optical selection rules for the acceptor-bound exciton recombination. Finally, we compare our theory with experimental data for CdS and GaN. In the specific case of CdS for which much experimental information is available, we demonstrate that, compared with cubic semiconductors, the sign of the short-range hole-exchange interaction is reversed and more than one order of magnitude larger. The whole set of data is interpreted in the context of a large value of the short-range hole-exchange interaction ⌶ 0 = 3.4Ϯ 0.2 meV. This value dictates the splitting between the ground-state line I 1 and the other transitions. The values we find for the electron-hole spin-exchange interaction and of the crystal-field splitting of the two-hole state are, respectively, −0.4Ϯ 0.1 and 0.2Ϯ 0.1 meV. In the case of GaN, the experimental data for the acceptor-bound excitons in the case of Mg and Zn acceptors, show more than one bound-exciton line. We discuss a possible assignment of these states.

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High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

Kornitzer

Ebner

Grehl

et al. 1999

phys. stat. sol. (b)

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Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

Cited by 228 publications

References 8 publications

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

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