Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

Song, Ying; Xu, Zongwei; Li, Rongrong; Wang, Hong; Fan, Y. H.; Rommel, Mathias; Liu, Jiayu; Астахов, Г. В.; Hlawacek, Gregor; Li, Bingsheng; Xu, Jun

doi:10.1007/s41871-020-00061-8

Cited by 19 publications

(5 citation statements)

References 39 publications

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“…Although some previous studies have investigated B diffusion for p-type doping [3], a high density of boron-related deep levels [4] is generated, which degrade electrical activation. On the other hand, due to the smaller energy gap to the valence band and a strong tendency to occupy atomic sites in the silicon sublattice [5,6], and since Al does not appear an abnormal out-diffusion phenomenon as B-doped SiC during annealing [7], Al is preferred. Influenced by constraints such as doping amount and impurity atomic distribution, lowresistance p-type SiC preparation is still a difficult problem to be solved [8], because of ion implantation-induced defects which severely limit carrier lifetime and the effectiveness of doping [9].…”

Section: Introductionmentioning

confidence: 99%

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

Liu

et al. 2021

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

Liu

et al. 2021

J. Mater. Chem. C

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“…It saturates at 5 × 10 13 cm −2 and then drops down due to ion‐induced damage of the SiC crystalline structure. [ 27 ] The grayscale for focused ion‐beam writing [ 28 ] is chosen such that the maximum logical 8‐bit state is coded with Φ max σ HIM . Here, σ HIM is the area determined by the lateral straggling obtained from SRIM (Stopping and Range of Ions in Matter) simulation.…”

Section: Resultsmentioning

confidence: 99%

Ultralong‐Term High‐Density Data Storage with Atomic Defects in SiC

Hollenbach,

Kasper,

Erb

et al. 2024

Adv Funct Materials

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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media, and cloud technologies. In addition to increasing storage density, new solutions should provide long‐term data archiving that goes far beyond traditional magnetic memory, optical disks, and solid‐state drives. Here, a concept of energy‐efficient, ultralong, high‐density data archiving is proposed, based on optically active atomic‐size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature‐dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near‐infrared laser excitation, grayscale encoding and multi‐layer data storage, the areal density corresponds to that of Blu‐ray discs. Furthermore, it is demonstrated that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron‐beam excitation.

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“…The system also has a coincident secondary electron microscope (SEM) to allow for nondestructive imaging and sample localization. Current applications being explored with the P-NAME tool include developing nanotechnologies such as solid-state impurity-ion and defect qubit devices (e.g., Sb in silicon, [23] color centers across a range of materials such as in diamond, [24][25][26] hexagonal boron nitride, [27,28] and also in silicon carbide [29,30] ) and isotopic materials synthesis (and enrichment), the doping of nanoscale systems (e.g., Mn doping of epitaxial quantum dots and nanowires), ion beam lithography, doping of photonic waveguide structures (e.g., Er implanted into LiNbO 3 [31] ), and others. In this work, we present the isotopic mass spectra of a range of LMAISs that have been developed for the P-NAME tool.…”

Section: Introductionmentioning

confidence: 99%

A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

Adshead,

Coke,

Aresta

et al. 2023

Adv Eng Mater

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The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. We demonstrate the development of a platform for nanoscale advanced materials engineering (P‐NAME) designed to meet this demand. P‐NAME delivers a high‐resolution focused ion beam system with a co‐incident scanning electron microscope and secondary electron detection of single‐ion implantation events. We demonstrate the isotopic mass resolution capability of the P‐NAME system for a wide range of ion species, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nano‐functionalisation. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. We also demonstrate the wider performance capabilities of P‐NAME including sub‐10 nm ion beam imaging resolution and the ability to perform direct‐write ion beam doping and nanoscale ion lithography.This article is protected by copyright. All rights reserved.

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Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

Cited by 19 publications

References 39 publications

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

Ultralong‐Term High‐Density Data Storage with Atomic Defects in SiC

A High‐Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

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