Photoluminescence and photoluminescence excitation study of CuGaTe2

Krustok, J.; Collan, H.; Hjelt, K.; Yakushev, М. V.; Hill, Arthur E.; Tomlinson, R. D.; Mändar, Hugo; Neumann, H

doi:10.1063/1.367963

Cited by 23 publications

(14 citation statements)

References 17 publications

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“…However, for Cu 2 ZnGeTe 4 the calculated

Δ E_{normalG}^{G G A}

≈ 0.99 eV is also underestimated as was obtained by using for CuGaTe 2 the value

E_{normalG}^{normalexp}

= 1.23 eV . A more reliable value of

Δ E_{normalG}^{G G A}

for Cu 2 ZnGeTe 4 (

Δ E_{normalG}^{G G A}

≈ 1.20 eV) is calculated by taken

E_{normalG}^{normalexp}

≈ 1.40 eV for the band gap of CuGaTe 2 , a value which has been recently obtained for high quality crystals of this material by photoluminescence and optical absorption measurements . Thus, using

Δ {normalE}_{normalG}^{G G A}

≈ 1.20 eV,

E_{normalG}^{t h}

= (1.22 ± 0.15) eV is obtained for KS‐Cu 2 ZnGeTe 4 , which is in reasonable agreement with

E_{normalG}^{normalexp}

≈ 1.49 eV obtained in the present work.…”

Section: Resultsmentioning

confidence: 65%

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

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A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu 2 ZnGeTe 4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm À1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm À1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this hightemperature modification of ZnTe and Cu 2 GeTe 3 secondary phases has been detected by both XRD and Raman spectroscopy.

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“…However, for Cu 2 ZnGeTe 4 the calculated

Δ E_{normalG}^{G G A}

≈ 0.99 eV is also underestimated as was obtained by using for CuGaTe 2 the value

E_{normalG}^{normalexp}

= 1.23 eV . A more reliable value of

Δ E_{normalG}^{G G A}

for Cu 2 ZnGeTe 4 (

Δ E_{normalG}^{G G A}

≈ 1.20 eV) is calculated by taken

E_{normalG}^{normalexp}

≈ 1.40 eV for the band gap of CuGaTe 2 , a value which has been recently obtained for high quality crystals of this material by photoluminescence and optical absorption measurements . Thus, using

Δ {normalE}_{normalG}^{G G A}

≈ 1.20 eV,

E_{normalG}^{t h}

= (1.22 ± 0.15) eV is obtained for KS‐Cu 2 ZnGeTe 4 , which is in reasonable agreement with

E_{normalG}^{normalexp}

≈ 1.49 eV obtained in the present work.…”

Section: Resultsmentioning

confidence: 65%

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Nieves

Delgado

Marcano

et al. 2016

Physica Status Solidi (b)

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“…2). The peak D 1 is located at 0.999 meV and is close to the theoretical acceptor [9]. To wit, the Huang-Rhys factor of band D 2 is S ≈ 0.22 whilst for the deep band in CuGaTe 2 it was 0.29.…”

mentioning

confidence: 85%

Deep and edge photoluminescence emission of CuInTe₂

Jagomägi¹,

Krustok

Raudoja

et al. 2003

Physica Status Solidi (b)

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PACS 61.72. Ji, 71.55.Ht, 78.55.Hx Photoluminescence studies of chalcopyrite CuInTe 2 were conducted. Three edge (1.041 eV, 1.030 eV, and 1.019 eV) and two deep level (0.999 eV and 0.957 eV) emission bands were observed at 11 K. The excitation intensity dependence of PL spectra was recorded. As possible band sources one excitonic and four band-to-defect recombination mechanisms are proposed in this paper.CuInTe 2 (CIT) and other chalcopyrite ternary crystals have recently attracted worldwide interest because of their optimal bandgap (about 1 eV) for photovoltaic conversion devices. Also, they provide high conversion efficiencies at relatively low expense.Photoluminescence (PL) is an easy-to-use and sensitive probe of defect levels inside forbidden band. However, the most interesting and challenging part is the interpretation of the experimental spectra.In the present paper we discuss the photoluminescence spectrum of chalcopyrite CuInTe 2 . Previously, Rincón et al. have studied the photoluminescence of CIT crystals in Refs. [1,2]. In these papers edge and excitonic PL radiation was presented. In addition, we report also the radiative emission of deep recombination centres.The CuInTe 2 powder samples were synthesised from the elements at 810 °C in fused quartz ampoules. The treatment continued with homogenising annealing at 665 °C, which is slightly lower than the peritectic temperature in CuInTe 2 [3]. The starting Cu/In concentration ratio was 1.03. The final polycrystalline CuInTe 2 ingot showed a well-defined chalcopyrite pattern in the XRD scan.The sample was cooled inside a closed-cycle He cryostat (T = 8-300 K) and excited with a 441 nm He-Cd laser with maximum output power 40 mW. The PL signal was recorded by using standard lock-in technique, computer-controlled SPM-2 grating monochromator (f = 40 cm) and InGaAs detector. The detected signal was corrected in conformity with grating efficiency and detector sensitivity spectra.The experimental PL spectrum of a CIT sample at 11 K is presented in Fig. 1. We distinguished five different PL bands -three near the band-edge bands (E 1 , E 2 , and E 3 ) and two deep bands (D 1 and D 2 ) with their phonon replicas. We found that the replicas appear according to the LO-phonon energy ħω LO = 23.2 meV. The corresponding peak positions and the possible band origins are presented in Table 1. The results were compared with theoretical calculations of defect levels in CIT [4], where the model of effective mass theory was applied.We identified that three types of recombination mechanisms governed our bands: excitonic, donor to valence band, and conduction band to acceptor emission. It is known that shallow levels, because of the

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“…1 The same was true with the lowtemperature photoluminescence ͑PL͒ properties of CGT crystals. The first detailed study was only recently published by Krustok et al 2 In Ref. 2 most of the attention was given to the PL bands near the band-gap energy E g .…”

Section: ͓S0021-8979͑99͒03221-1͔mentioning

confidence: 99%

Photoluminescence study of deep levels in CuGaTe2 crystals

Krustok

Raudoja

Yakushev

et al. 1999

Journal of Applied Physics

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A deep photoluminscence band at 0.95 eV was studied in CuGaTe2 crystals. The shape of this band did not change with laser power and no j shift was detected. This band shifts towards higher energy with increasing temperature and its shape becomes more asymmetric. The activation energy of this band was ET=0.20 eV as measured with thermal quenching. The possible association of the 0.95 eV band with grain boundaries or dislocations is discussed.

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Photoluminescence and photoluminescence excitation study of CuGaTe2

Cited by 23 publications

References 17 publications

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Deep and edge photoluminescence emission of CuInTe₂

Photoluminescence study of deep levels in CuGaTe2 crystals

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Photoluminescence and photoluminescence excitation study of CuGaTe2

Cited by 23 publications

References 17 publications

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu2ZnGeTe4 quaternary semiconductor compound

Deep and edge photoluminescence emission of CuInTe2

Photoluminescence study of deep levels in CuGaTe2 crystals

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Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Structural characterization of the high‐temperature modification of the Cu₂ZnGeTe₄ quaternary semiconductor compound

Deep and edge photoluminescence emission of CuInTe₂