Photoluminescence and Optical Beam Induced Current Images of Defects in Semiconductors

Abstract

The photoluminescence images of defects in semiconductors are calculated and the factors discussed which affect the resolution. In the special case of a Schottky barrier being present on the surface of the semiconductor it is shown that the optical beam induced current resolution and the photoluminescence resolution are identical. It is further shown that by considering the ratio of the contrasts in the two cases that the depth of a point defect may be calculated.

Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

“…OBIC imaging is particularly suited to the inspection of semiconductor devices [6] due to the fact that it is a noncontact, non-destructive testing method. This created a great interest in this technique throughout the 1980s [7][8][9][10][11]. However, OBIC imaging cannot perform depthresolved analysis because absorption takes place throughout the entire volume of the beam within the sample, generating carriers over a large axial range.…”

Solid immersion lens applications for nanophotonic devices

“…OBIC imaging is particularly suited to the inspection of semiconductor devices [59] due to the fact that it is a non-contact, non-destructive testing method. This created a great interest in this technique throughout the 1980s [60][61][62][63][64]. However, there are a few limitations associated with this imaging mode.…”