Photolithographic performance of a-As2S3 resists under synchrotron X-ray irradiation

Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

“…The exposure interval for X-ray recording on the investigated media is 2,52-5,1 J/cm 2 , which shows a higher sensitivity compared to X-ray lithography for the range λ=0,1-0,6 nm. As was shown in work [15], the As 2 S 3 in this wavelength range requires exposures of 25-50 J/cm 2 . The effect of structural changes in CGS under the X-ray radiation of λ=0,154 nm requires a more detailed study, what was not the purpose of this work.…”

“…As was shown in this work, the maximum sensitivity of As 2 S 3 to X-rays is in the spectral range λ=2-7 nm. In [15], As 2 S 3 thin films were studied as photoresist in shorter X-rays wavelength λ=0,1-0,6 nm, where their sensitivity is lower and large exposures are required. This work aimed to expand the area of application of chalcogenide glassy semiconductors for x-ray imaging.…”

Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

“…The surface relief formation (mass-transport effect) in the glassy materials of the system As-Se-S under laser illumination was studied in works [12][13]. The As 2 S 3 thin films, as photoresists for x-ray photolithography, were studied in works [14][15]. The maximum sensitivity of As 2 S 3 for X-ray photolithography is in the spectral range λ=2-7 nm [14].…”

Studies of Ag Diffusion Processes into Thin-Film As2s3 Structures Doped With Sn under the Exposure of X-Ray Radiation

“…Chalcogenide glassy semiconductors are sensitive materials to electron-beam recording [5][6][7] and can be used as photoresist materials sensitive in UV-visible regions with a resolution up to 7000 ln/mm [8], and photoinduced transformation (photodarkening, photorefraction) [9][10][11]. The investigations of As2S3 thin films as photoresists for X-ray photolithography were studied in work [12]. This work aimed to study the photodiffusion effects of Ag in As2S3 thin films doped by Sn under X-ray radiation.…”