Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Pässler, R.

doi:10.1063/1.1753076

Cited by 66 publications

(48 citation statements)

References 70 publications

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“…7 Correcting e o (hm) for the incident photon flux determines the spectral dependence of the deep-level optical cross-section (r o ). Fitting r o (hm) to an appropriate model 13 that accounts for lattice coupling of the deep-level defect yields values for the optical ionization energy (E o ) and Franck-Condon shift (d FC ). Values of the fitted parameters were robust to changes in the fitted data range (yielding less than 50 meV variation), as long as the threshold and saturation regions were included.…”

Section: Methodsmentioning

confidence: 99%

“…Focusing first on the hm > 3.30 eV range, saturations in the spectra at 3.36 eV and 3.40 eV mark the In 0.02 Ga 0.98 N and p-GaN:Mg band edge, respectively. The 3.36 eV and 3.40 eV band edges were also weakly evident for DLOS of sample A measured at 0 V. The two DLOS onsets near 1.70 eV and 2.50 eV for the À2 V DLOS spectrum were fitted to the same theoretical model 13 as before to extract E o = 1.85 eV and 2.51 eV, respectively. The E v + 1.85 eV and E v + 2.51 eV levels exhibited thresholds that were red-shifted relative to their respective E o , indicating significant d FC values.…”

Section: Optical Spectroscopy Of Defectsmentioning

confidence: 99%

“…5 cannot be attributed to band tailing due to In 0.17-Ga 0.83 N Urbach tails because band-to-band absorption would give rise to a photocurrent rather than a photocapacitance. The 1.2 eV and 2.6 eV DLOS onsets were fitted to a theoretical model 13 to extract E o values of 1.60 eV and 2.59 eV, respectively. The deep-level properties are summarized in Table I.…”

Section: Optical Spectroscopy Of Defectsmentioning

confidence: 99%

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Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

Armstrong

Crawford

Koleske

2010

Journal of Elec Materi

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0.17 Ga 0.83 N/In 0.02 Ga 0.98 N/p-GaN:Mg heterostructures were studied using deep-level optical spectroscopy (DLOS). Depth-resolved DLOS was achieved by exploiting the polarization-induced electric fields to discriminate among defects located in the In 0.17 Ga 0.83 N and the In 0.02 Ga 0.98 N regions. Growth conditions for the In x Ga 1Àx N layers were nominally the same as those in InGaN/GaN multi-quantum-well (MQW) structures, so the defect states reported here are expected to be active in MQW regions. Thus, this work provides important insight into defects that are likely to influence MQW radiative efficiency. In 0.17 Ga 0.83 N-related bandgap states were observed at E v + 1.60 eV and E v + 2.59 eV, where E v is the valence-band maximum, compared with levels at E v + 1.85 eV, E v + 2.51 eV, and E v + 3.30 eV in the In 0.02 Ga 0.98 N region. A lighted capacitance-voltage technique was used to determine the areal density of deep states. The possible origins of the associated defects are considered along with their potential roles in light-emitting diodes.

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Section: Methodsmentioning

confidence: 99%

Section: Optical Spectroscopy Of Defectsmentioning

confidence: 99%

Section: Optical Spectroscopy Of Defectsmentioning

confidence: 99%

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Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

Armstrong

Crawford

Koleske

2010

Journal of Elec Materi

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“…The symbols are data and the lines are fits to the models of Lucovksy 11 or Pässler. 12 The data were offset for clarity since relative spectral variations of the DLOS spectra are sufficient to characterize the defect states. Note that DLOS measures deep level energy but does not quantify N t ; N t measurement is discussed later.…”

Section: Study Of the Impact Of Point Defects In Alganmentioning

confidence: 99%

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

Armstrong¹,

Miller²,

Crawford³

et al. 2011

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We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures. 4 ACKNOWLEDGMENTSThe authors gratefully acknowledge Blythe Clark, and Qiming Li for providing assistance in materials characterization. We appreciate the support of managers Dan Barton (project manager), Robert Biefeld, and Jerry Simmons throughout this work.5

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“…[8] for different types of defects in Si and Ge, and in Refs. [9] and [10] for some deep levels in compound semiconductors. In particular Ref.…”

mentioning

confidence: 99%

Estudo do efeito térmico sobre os níveis de impurezas em semicondutores

Amato

2006

Rev. Bras. Ensino Fís.

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The temperature dependence of impurity levels in semiconductors is a very interesting problem in the domain of deep levels impurities. Its evidence in experimental results is reported by many authors. However, the interpretation on theoretical basis requires sophisticated models. In this paper we propose a very simple model that allows to extract the relevant parameters from the experiment without needing heavy computation.

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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Cited by 66 publications

References 70 publications

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

Estudo do efeito térmico sobre os níveis de impurezas em semicondutores

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