Photoinduced phenomena in amorphous As4S3Se3–Sn films

Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

“…A wide range of carriers and methods for recording optical information was developed and studied based on these materials. Chalcogenide glassy semiconductors are sensitive materials to electron-beam recording [1][2][3], photoinducted transformation (photodarkening, photorefraction) [4][5][6], and as photoresist materials sensitive in UV-visible regions [7]. The surface relief formation (mass-transport effect) in the glassy materials of the system As-Se-S under non-uniform illumination is presented in works [8][9].…”

The structure polymer/As-Se-S doped by Bi for X-ray imaging

“…The wire was placed onto the surface of the thermoplastic layer (5, Fig. 1a) and irradiated with X-ray or visible irradiation (6). The carrier is removed from the X-ray chamber after irradiation for the next step of image visualization [16][17]20].…”

“…Chalcogenide glassy semiconductors (CGS) of As-Se-S system exhibit a large implementation range, including optical information recording applications. CGS are sensitive materials to surface relief formation (mass-transport effect) under laser illumination [1][2], electron-beam recording [3][4][5], photoinduced transformation (photodarkening, photorefraction) [6][7][8], and as photoresist materials sensitive in UV-visible regions [9]. The photo-thermoplastic carriers, based on CGS [10], have high values of resolution power -up to 4000 mm -1 [11], diffraction efficiency -up to 40% [12], and 1-3 s real-time image formation [13].…”

Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

“…The photo-thermoplastic carriers, based on CGS, for real-time holography [1] have high values of resolution power -up to 4000mm -1 [2], diffraction efficiency -up to 40% [3], and the time of the image formation 1-3 s [4]. CGS are sensitive materials to electron-beam recording [5][6][7], photoinducted transformation (photodarkening, photorefraction) [8][9][10], and as photoresist materials sensitive in UV-visible regions [11]. The surface relief formation (mass-transport effect) in the glassy materials of the system As-Se-S under laser illumination was studied in works [12][13].…”