Abstract:Effect of the electrode materials on the resistive switching of Ti4O7 Appl. Phys. Lett. 101, 053502 (2012) Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Appl. Phys. Lett. 101, 052901 (2012) Orbital symmetry induced conductance switching in a graphene nanoribbon heterojunction with different edge hydrogenations Appl. Phys. Lett. 101, 053101 (2012) Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures Appl. Phys.… Show more
“…The samarium chalcogenides have shown pressure-induced transition from the semiconducting to the metallic state [14][15][16][17]. It is also called the black-golden transition; this appears at about 6.5 kbar at room temperature [14,[16][17][18][19][20].…”
Section: Iitheoretical Calculationmentioning
confidence: 99%
“…It is also called the black-golden transition; this appears at about 6.5 kbar at room temperature [14,[16][17][18][19][20]. The total energy in a crystal is given by…”
“…The samarium chalcogenides have shown pressure-induced transition from the semiconducting to the metallic state [14][15][16][17]. It is also called the black-golden transition; this appears at about 6.5 kbar at room temperature [14,[16][17][18][19][20].…”
Section: Iitheoretical Calculationmentioning
confidence: 99%
“…It is also called the black-golden transition; this appears at about 6.5 kbar at room temperature [14,[16][17][18][19][20]. The total energy in a crystal is given by…”
“…The results of grazing incidence Xray diffraction and Xray photoelectron analyses revealed that metallic to semiconductorSmS phase transition occurred by the fs laser irradiation. 53),54) Figure 13 shows the reflectance spectra of the asdeposited and fullyirradiated SmS films. This phase transition was ac companied by the significant reflectance change of the film up to 40÷ in the visible region and up to 45÷ in the nearinfrared region.…”
“…The SmS returns to semiconducting state at lower pressure of about 0.5 kbar [1]. The Band gaps of samarium chalcogenides are 0.15 eV, 0.45eV and 0.65eV respectively at zero pressure [1][2][3][4][5]. The transition is associated with the promotion of a 4f electron in the 5d band, changing the valence from Sm 2+ to Sm …”
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