Photoinduced etching of thin films of chalcogenide glassy semiconductors

Dan’ko, Viktor; Индутный, И. З.; Min'ko, V.I.; Shepelyavyi, P. E.; Bereznyova, O. V.; Lytvyn, O. S.

doi:10.1134/s1063782612040057

Cited by 14 publications

(18 citation statements)

References 15 publications

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“…Similar results with certain quantitative details were obtained for arsenic chalcogenide films, but for the arsenic-based ChG the photoetching effect occurs only in annealed layers [12].…”

Section: Fig 2 Shows the Kinetic Curves D(t) For The Etching Ofsupporting

confidence: 85%

“…These transient structure changes, as shown by our investigations [12], are accompanied by a change in solubility of chalcogenides in selective etchants. It can be assumed that photodissolution of ChG is probably stimulated just by bond rearrangements during their exposure to photoactive light.…”

Section: Fig 2 Shows the Kinetic Curves D(t) For The Etching Ofsupporting

confidence: 76%

“…act as positive etchants [12,13]. This new photostimulated effect allows to realize the photolithographic process on annealed ChG layers (including Ge-based films) and deposited using non-thermal methods with simultaneous exposure and selective etching of these layers.…”

Section: Introductionmentioning

confidence: 99%

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Photostimulated etching of germanium chalcogenide films

Dan’ko¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral dependence is correlated with absorption in the film at the absorption edge. A possible mechanism for the photoinduced etching of ChG films has been discussed. The high-frequency diffraction gratings on germanium ChG -more environmentally acceptable compounds than traditionally used arsenic chalcogenides -were recorded using the method of interference immersion photolithography with photoinduced etching.

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“…Similar results with certain quantitative details were obtained for arsenic chalcogenide films, but for the arsenic-based ChG the photoetching effect occurs only in annealed layers [12].…”

Section: Fig 2 Shows the Kinetic Curves D(t) For The Etching Ofsupporting

confidence: 85%

Section: Fig 2 Shows the Kinetic Curves D(t) For The Etching Ofsupporting

confidence: 76%

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Photostimulated etching of germanium chalcogenide films

Dan’ko¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…They have found applications in VIS and IR optics (diffractive optical elements, waveguides and others [1][2][3]), optical memories [4,5] and also as high resolution photoresists [6,7]. Thin films of ChGs are usually deposited by vacuum based deposition techniques, such as vacuum thermal evaporation, sputtering or laser ablation [1][2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Structure and properties of spin-coated Ge_25S_75 chalcogenide thin films

Šlang

Janíček

Pálka

2016

Opt. Mater. Express

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Amorphous chalcogenide thin films of Ge25S75 composition have been deposited by spin-coating technique. Optical properties of thin films were investigated by spectroscopic ellipsometry in UV-MIR spectral range. Obtained results prove increase of thin films refractive index in the transparent region and decrease of their thickness with increasing annealing temperature implying densification of the glass structure. Short wavelength absorption edge is shifting to lower energies (red shift) with increasing annealing temperature. Decreasing organic molecules content with increasing temperature of annealing was observed in MIR part of extinction coefficient and verified by Raman spectroscopy and EDS. Raman spectra also gave evidence of thermo-induced structural polymerization and decomposition of organic salts molecules yielding thin films with structure similar to the structure of the source bulk glass.

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“…The possible mechanism of the photoinduced etching effect was discussed in our previous paper [11]. Figure 2 shows the AFM image of a diffraction grating recorded in Ge 25 Se 75 layer by using the method of interference lithography with photoinduced etching as well as the profile of its grooves.…”

Section: Methodsmentioning

confidence: 99%

The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist

Dan’ko¹,

Индутный²,

Mynko³

et al. 2016

Nano Online

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The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs -more environmentally acceptable compounds than traditionally used arsenic chalcogenides -were recorded, and their characteristics were studied.

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Photoinduced etching of thin films of chalcogenide glassy semiconductors

Cited by 14 publications

References 15 publications

Photostimulated etching of germanium chalcogenide films

Photostimulated etching of germanium chalcogenide films

Structure and properties of spin-coated Ge_25S_75 chalcogenide thin films

The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist

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