Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Fuyuki, Takashi; Kondō, Hayato; Yamazaki, Tsutomu; Takahashi, Yasuhiro; Uraoka, Yukiharu

doi:10.1063/1.1978979

Cited by 463 publications

(252 citation statements)

References 4 publications

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“…Besides dark current-voltage (I-V) characteristic measurements, most of the results rely on lock-in thermography 7 (LIT) under reverse bias and on electroluminescence (EL) imaging under forward 8 and reverse bias. 9,10 Under forward bias LIT allows to image low lifetime regions and any kind of shunts and under reverse bias all kinds of leakage and breakdown currents depending on the reverse bias magnitude.…”

Section: Methodsmentioning

confidence: 99%

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

121

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Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 X cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between À4 and À9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between À9 and À13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond À13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.

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Section: Methodsmentioning

confidence: 99%

Understanding junction breakdown in multicrystalline solar cells

Breitenstein

Bauer

Bothe

et al. 2011

Journal of Applied Physics

121

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“…[1][2][3] Thus, it is an appropriate tool for investigating pre-breakdown sites. Figure 1 shows an electroluminescence (EL 4 ) image of a multicrystalline mc-Si solar cell, which images grown-in recombinative crystal defects, together with two conventional lock-in thermography images measured in the dark (DLIT) at reverse biases of 11Á5 and 14 V, respectively. Since only reverse bias LIT investigations are reported here, we will denote the reverse bias with positive numbers throughout this paper.…”

mentioning

confidence: 99%

Imaging physical parameters of pre‐breakdown Sites by lock‐in thermography techniques

Breitenstein

Bauer

Wagner

et al. 2008

Progress in Photovoltaics

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Local pre-breakdown sites in solar cells can be studied by lock-in thermography (LIT). Three new LIT techniques are proposed and demonstrated here, which are TC-DLIT for studying the local temperature coefficient of pre-breakdown sites, Slope-DLIT for measuring the normalized local slope of the I-V characteristics, and MF-ILIT for imaging the local carrier multiplication factor. First results on multicrystalline silicon cells show that the pre-breakdown mechanism cannot completely be described by the conventional impact ionization and internal field emission models.

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“…The detection of a shunted region can be carried out with electroluminescence (EL) [5][6], photoluminescence (PL) [7], or thermography (TG) [8][9] technologies. A liquid crystal sheet can also be used [10].…”

Section: Shunts Detectionmentioning

confidence: 99%

Shunt removal and patching for crystalline silicon solar cells using infrared imaging and laser cutting

Zhang

Shen

Yang

et al. 2009

Progress in Photovoltaics

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Shunts in crystalline silicon solar cells can be physically removed and replaced with good cells to eliminate their influences, which is proved by the experiments in this paper. By infrared imaging and laser cutting, the shunted regions near the edges of cell A and in the middle of cell B were identified and removed with their efficiencies increased by 6Á8% and 3Á0%, respectively. After shunt removal, cell B was patched up with good cells and its final work current further increased from 3Á71 to 4Á11 A. The result implies that this work could improve the output power and current matching in a module for the repaired cell.

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Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Cited by 463 publications

References 4 publications

Understanding junction breakdown in multicrystalline solar cells

Understanding junction breakdown in multicrystalline solar cells

Imaging physical parameters of pre‐breakdown Sites by lock‐in thermography techniques

Shunt removal and patching for crystalline silicon solar cells using infrared imaging and laser cutting

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