Shunt removal and patching for crystalline silicon solar cells using infrared imaging and laser cutting

Zhang, Lucheng; Shen, Hui; Yang, Zhuojian; Jin, Jingsheng

doi:10.1002/pip.934

Cited by 21 publications

(6 citation statements)

References 12 publications

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“…In such a situation, it has been found that [10,11], a significant reverse current can flow through the shaded cell and this can lead to a premature break down and permanent degradation, because the current is observed to flow through the shunt resistance. It would be interesting to understand the possible improvement in the photovoltaic module performance, with either removal of shunts [12,13] or their isolation [14,3,15] or preventing them from occurring at least in the most detrimental locations during cell production. The aim of the present work is to present a systematic study of influence of ohmic shunts at significant spatial locations in an industrial Silicon photovoltaic module.…”

Section: Introductionmentioning

confidence: 99%

Effect of Local Shunting on the Electrical Mismatch Losses in Industrial Silicon Photovoltaic Modules

Pannientakandi¹,

Gupta²,

Manjoli³

2018

IJPER

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Abstract. The paper presents the results of investigation on the influence of an ohmic shunt located at various spatial positions on the photovoltaic module performance by distributed diode model based simulations. By systematically varying the parameters such as the resistance of the shunt, proximity to the finger and busbar metallization, area of the shunt, irradiance and number of shunted cells in the module, a deep insight about the impact of the shunt on the module electrical performance have been obtained. Further, influence of spatial location of shunts has been studied by assuming a shunted region of same area and severity at different positions in the photovoltaic module, based on the proposed simulation approach. The study revealed novel insights about significance of spatial locations of shunts and the proximity of finger and busbar metallization. In general, it was found that the proximity to the busbar and finger metallization and the shunt position holds the key to the impact the shunt will have on the photovoltaic module performance in addition to the resistance of shunt itself. Quantum of loss due to the presence of finger or busbar metallization in close proximity of shunt location has been revealed by the proposed approach. This understanding can enable to gain an improved performance of the photovoltaic cell and module, by implementing the approach at the cell production level.

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Section: Introductionmentioning

confidence: 99%

Effect of Local Shunting on the Electrical Mismatch Losses in Industrial Silicon Photovoltaic Modules

Pannientakandi¹,

Gupta²,

Manjoli³

2018

IJPER

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“…It will be very useful and relevant to industry in classifying the shunts in different categories based on the level of severity in order to tackle the shunting problem during production. Shunts which cause more reduction in output power may be removed or isolated using laser technique [5,6] and leaving out those shunts which cause relatively low loss in efficiency of the cell. Also, corrective steps in production can be taken up based on severity of shunts in order to remove the origin of these process induced shunts.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Shunt Losses in Industrial Silicon Solar Cells

Somasundaran

Gupta

2016

International Journal of Photoenergy

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Shunting is one of the key issues in industrial silicon solar cells which degrade cell performance. This paper presents an approach for investigation of the performance degradation caused by the presence of ohmic extended shunts at various locations in industrial silicon solar cells. Location, nature, and area of the shunts existing in solar cells have been examined by lock-in infrared thermography (LIT). Based on LIT images and experimental darkI-Vcurves of solar cell, shunted cell has been modeled, from which loss in fill factor and efficiency due to the specific shunt has been obtained. Distributed diode modeling approach of solar cell has been exploited for obtaining simulation results which were supported by experimental measurements. The presented approach is useful to estimate performance reduction due to specific shunts and to quantify losses, which can help in improving the efficiency of solar cell during production by tackling the shunt related problems based on the level of severity and tolerance.

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“…Current applications for infrared imaging and thermography include: detection, diagnosis and prognosis of breast cancer [25,26], study of skin toxicities and tumor control in BNCT melanoma treatments [27], plant species identification [28], solar physics [29], astronomy [30], civil engineering [31], atmospheric wind velocity detection [32], maritime surveillance systems [33], imaging missile seekers [34], gas detection [35,36], and nondestructive detection in multiple fields of technology [37][38][39][40][41][42][43][44][45][46][47][48][49].…”

Section: Introductionmentioning

confidence: 99%

Finite element analysis and neural network model for electronic hidden solder joint geometry prediction

Palomares

Hsieh

2010

SPIE Proceedings

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This paper investigates an active thermography approach to probing hidden solder joint geometry. Ten boards were fabricated with the same number of solder joints and amount of solder paste (0.061 g), but using three solder joint geometries (60°, 90°, and 120°). The 90° angle solder pin represented a normal joint, and the 60° and 120° angle pins represented abnormal solder joints. Each board was covered with another board that had three openings just big enough to allow the pin terminals to protrude. A semi-automated system was built to heat and then transfer each board set to a chamber where an infrared camera was used to scan the board as it was cooling down. Each board set underwent the heating, cooling, and scanning process for five trials. Two-thirds of the data set was used for model development and one-third for model evaluation. An artificial neural network (ANN) was constructed to predict abnormal joints given thermal data. Results suggest that solder joints with more surface area cool much faster than those with less surface area. A Finite Element Analysis (FEA) of the heating up and cooling down process consistently predicted solder geometry using the ANN with 86% accuracy. This approach can be used not only to inspect bad solder joints (i.e., low reliability) but also to mass screen for cold solder joints during BGA assembly, since the air gaps in cold solder joints may cause them to cool more slowly than normal joints.

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Shunt removal and patching for crystalline silicon solar cells using infrared imaging and laser cutting

Cited by 21 publications

References 12 publications

Effect of Local Shunting on the Electrical Mismatch Losses in Industrial Silicon Photovoltaic Modules

Effect of Local Shunting on the Electrical Mismatch Losses in Industrial Silicon Photovoltaic Modules

Evaluation of Shunt Losses in Industrial Silicon Solar Cells

Finite element analysis and neural network model for electronic hidden solder joint geometry prediction

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