1958
DOI: 10.1103/physrev.112.114
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Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds

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Cited by 562 publications
(194 citation statements)
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“…However, the generation of hot electrons circumvents this limitation: hot electrons generated in one metal can tunnel through the thin insulating layer and be collected in the other metal contact, leading to a measurable photocurrent. Similar to the three-step model [56,57], the photoemission of carriers across a MIM diode can be described in a series of five steps [103] as depicted in the band diagram shown in Figure 3A. This is similar to the junctions in plasmonic nanogap antennas [110,113], where electrons can tunnel through the nanogap leading to photocurrent ( Figure 3B).…”
Section: Free-space Photodetectorsmentioning
confidence: 85%
See 1 more Smart Citation
“…However, the generation of hot electrons circumvents this limitation: hot electrons generated in one metal can tunnel through the thin insulating layer and be collected in the other metal contact, leading to a measurable photocurrent. Similar to the three-step model [56,57], the photoemission of carriers across a MIM diode can be described in a series of five steps [103] as depicted in the band diagram shown in Figure 3A. This is similar to the junctions in plasmonic nanogap antennas [110,113], where electrons can tunnel through the nanogap leading to photocurrent ( Figure 3B).…”
Section: Free-space Photodetectorsmentioning
confidence: 85%
“…The very first attempt to quantitatively describe the photon-induced emission of electrons from metals was made by Fowler [55] in the 1930s. Later in the 1950s, the overall hot electron generation and collection process was described by Spicer with an intuitive three-step model [56,57]: (1) hot electrons are generated in the metal through the absorption of photons, (2) a portion of the hot electrons diffuse to the metal-semiconductor interface before thermalization, and (3) hot electrons with sufficient energy and the correct momentum are injected into the conduction band of the semiconductor through internal photoemission. Therefore, the efficiency of hot carrier devices depends on the initial hot carrier distribution, the transport of the carriers, and the carrier collection efficiency.…”
Section: Internal Photoemissionmentioning
confidence: 99%
“…Semiconductor photocathodes, in particular the negative-affinity ones, have very high QE, as high as 0.6 electrons per photon but long response times (>10 ps) [11]. Moreover, they are highly reactive and thus sensitive to the vacuum-environment quality.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, electron emission from GaAs photocathodes is described within the approach developed by Spicer [8]. Electrons in the conducting band diffuse to the cathode surface.…”
Section: Modeling Of Ultrashort Electron Bunchesmentioning
confidence: 99%