Photoemission surface characterization of (001) In2O3 thin film through the interactions with oxygen, water and carbon monoxide: Comparison with (111) orientation

Brînzari, V.; Cho, B.K.; Kamei, Motohiro

doi:10.1016/j.apsusc.2014.10.072

Cited by 21 publications

(19 citation statements)

References 48 publications

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“…Figure 21 shows the results of a conducted simulation. They indicate that the increase in the PF due to the filtering effect can be achieved in semiconductors of From our point of view, such a strong influence of the filtering effect on the thermoelectric properties of In2O3 is a consequence of the combination of the specific surface properties of In2O3 [198,199], the successful choice of type and concentration of the dopant [132], and the appropriate structural properties of the films. As mentioned previously, the maximum filtering effect is achieved when the band bending, Ub, at the grain boundary is only a few kT greater than the energetic position of the Fermi level, EF, in the conduction zone.…”

Section: Thin Nanostructured In 2 O 3 Filmsmentioning

confidence: 99%

“…The first one is the change in electronic states of indium oxide under the influence of doping with tin [200], the second one is the segregation of the tin atoms in the surface layer, which is accompanied by the accumulation of charged defects in the structurally-distorted surface region, and the last one is oxygen chemisorption on the surface of the In2O3:Sn grains which is accompanied by the capture of electrons from the conduction band. It should be noted that the influence of metal oxide doping on the height of the potential barrier at the inter-crystallite boundary was From our point of view, such a strong influence of the filtering effect on the thermoelectric properties of In2O3 is a consequence of the combination of the specific surface properties of In2O3 [198,199], the successful choice of type and concentration of the dopant [132], and the appropriate structural properties of the films. As mentioned previously, the maximum filtering effect is achieved when the band bending, Ub, at the grain boundary is only a few kT greater than the energetic position of the Fermi level, EF, in the conduction zone.…”

Section: Thin Nanostructured In 2 O 3 Filmsmentioning

confidence: 99%

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In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

Brînzari

Ham

2018

Crystals

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Abstract:In this paper, the thermoelectric properties of In 2 O 3 -based materials in comparison with other thermoelectric materials are considered. It is shown that nanostructured In 2 O 3 Sn-based oxides are promising for thermoelectric applications at moderate temperatures. Due to the nanostructure, specific surface properties of In 2 O 3 and filtering effects, it is possible to significantly reduce the thermal conductivity and achieve an efficiency of thermoelectric conversion inaccessible to bulk materials. It is also shown that a specific surface state at the intergrain boundary, optimal for maximizing the filtering effect, can be achieved through (1) the engineering of grain boundary parameters, (2) controlling the composition of the surrounding atmosphere, and (3) selecting the appropriate operating temperature.

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Section: Thin Nanostructured In 2 O 3 Filmsmentioning

confidence: 99%

Section: Thin Nanostructured In 2 O 3 Filmsmentioning

confidence: 99%

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

Brînzari

Ham

2018

Crystals

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“…[9], metalorganic chemical vapor deposition (MOCVD) [10], electron beam evaporation [11], thermal decompositon of precursors [12], daldırarak kaplama [13], thermal oxidation [14] ve döndürerek kaplama (sol-gel spin coating) [15,16] gibi fiziksel ve kimyasal yöntemlerle üretilmiştir. Döndürerek kaplama yönteminde, elde edilecek film için hazırlanan çözelti bir taban üzerine aktarılır.…”

Section: Introductionunclassified

Fotovoltaik Uygulamalar İçin Döndürerek Kaplama Yöntemiyle Elde Edilen In2o3 Filmleri

Kul¹,

Şenel²

2017

deufmd

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Özet: In2O3 yarıiletken filmleri oda sıcaklığında döndürerek kaplama yöntemiyle elde edilmiştir. Bu yöntem ile numunelerin elde edilme aşamalarında çözelti konsantrasyonunun, taban dönüş hızının, çözelti miktarının, kaplama sayısının, kaplama süresinin ve tavlama sıcaklığının belirlenmesi çalışmaları yapılmıştır. Filmlerin fiziksel özellikleri x-ışını toz kırınımı (XRD), elipsometre, alan emisyonlu taramalı elektron mikroskobu (FESEM), absorpsiyon ve geçirgenlik spektroskopisi ölçümleri ile karakterize edilmiştir. Numunelerin kırınım desenleri filmlerin polikristal olduğunu ve kübik yapıda kristallendiğini göstermiştir. Optik absorpsiyon ölçümlerinden filmlerin yasak enerji aralıklarının direk bant geçişli olduğu belirlenmiştir. Farklı tavlama sıcaklıklarında In2O3 filmlerinin yasak enerji aralığı değerleri 3.49 eV civarında bulunmuştur. Görünür bölgede filmlerin geçirgenliği 65% ile 80% aralığındadır. In2O3 Films Produced by Sol-Gel Spin Coating Method for Photovoltaic ApplicationsKeywords Indium Oxide, Sol-Gel Spin Coating Method, X-Ray Diffraction, FESEM, Optical Band Gap Abstract: In2O3 semiconductor films have been prepared by solgel spin coating method at room temperature. The determination of the processing parameters such as molar concentration of the precursor, spinning speed of the substrate, volume of the solution, number of coating cycles, spin time and annealing temperature for samples have been studied. The physical properties of these films are characterized by x-ray powder diffraction (XRD), ellipsometer, field emission scanning electron microscope (FESEM), absorption and transmittance spectroscopy measurements. X-ray diffraction patterns of the In2O3 samples have revealed that the samples are polycrystalline with cubic crystal structure. It was determined that optical band gap of the films has direct band transition by using optical absorption measurements. Optical band gap values of In2O3 films at different annealing temperatures were found to be around 3,49 eV. The transmittance values of the films in the visible region have varied between 65% and 80%.

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“…Typically, a clean crystalline indium oxide surface exhibits a surface electron accumulation layer resulting in downward band bending . Exposure to oxygen above room temperature results in a thermally activated oxidation of the indium oxide resulting in flat band conditions for the In 2 O 3 (001) surface and even upward band bending for the In 2 O 3 (111) surface (). Furthermore, worth to mention is the aspect that an oxygen plasma treatment also results in strong depletion of electrons at the surface ().…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand carbon monoxide interaction depends strongly on the activation temperature, i.e. both adsorption or dissociation of the CO molecule is possible ().…”

Section: Introductionmentioning

confidence: 99%

Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water

Himmerlich

Eisenhardt

Berthold

et al. 2016

Physica Status Solidi (a)

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The interaction of defect-rich nanocrystalline indium oxide films, which have previously shown to exhibit excellent ozone sensing properties, with O-3, O-2, and H2O molecules is investigated using ultra-violet and X-ray photoelectron spectroscopy. The investigated samples are grown by metalorganic chemical vapor deposition at low temperatures resulting in high oxygen deficiency and high defect density. The ozone-induced surface oxidation and UV-induced photoreduction mechanisms of the ozone sensor active material are evaluated with respect to surface stoichiometry and electronic properties including adsorbate features, band bending and surface dipole formation. A strong interaction with ozone and water is found, whereas the interaction with O-2 is relatively weak. In all cases the interaction results in the same negatively charged oxygen adsorbate species. which can either be removed by UV light or by annealing resulting in the capability of these films to be used in reversible adsorption induced oxidation and UV/thermal reduction cycles

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Photoemission surface characterization of (001) In2O3 thin film through the interactions with oxygen, water and carbon monoxide: Comparison with (111) orientation

Cited by 21 publications

References 48 publications

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

Fotovoltaik Uygulamalar İçin Döndürerek Kaplama Yöntemiyle Elde Edilen In2o3 Filmleri

Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water

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