Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

Chye, P.; Lindau, I.; Pianetta, P.; Garner, Charles M.; Su, Ching‐Yuan; Spicer, W. E.

doi:10.1103/physrevb.18.5545

Cited by 174 publications

(24 citation statements)

References 43 publications

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“…From photoemission work with Au alloys, it is known that Au surface distribution may be probed by following the details of the 5d bands [50]. When Au atoms are well dispersed, as in a dilute Au alloy, 5d bands are shifted toward higher binding energies, as compared to the bulk values.…”

Section: The Growth Of Gold Overlayers On Re:gan Surfacesmentioning

confidence: 99%

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

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Section: The Growth Of Gold Overlayers On Re:gan Surfacesmentioning

confidence: 99%

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…Consequently, there must be a change in the gallium and arsenic concentrations with depth, as well as in the gold distribution after deposition. Sputter etch profiling using AES has confirrned such compositional depth profiles (31). This development is determined by the relative solubilities, the tendenties to form compounds or alloys and the relative diffusion rates of the elements mvolved.…”

Section: Growth On Clean Gaas(110)mentioning

confidence: 99%

The initial growth of vapour deposited gold films

Andersson

1982

Gold Bull

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Gold films are extensively used in the production of both ohmic-and Schottky- Studies of gold films have a long history and the use of evaporated gold films to protect and to gild surfaces emerged more or less in parallel with the development of vacuum techniques. Since then, films of gold have been studied to a greater extent than those of any other metal, because of both the relative simplicity of gold evaporation and the resistance of gold to chemical attack during and after the deposition process. The literature on gold films therefore constitutes a large proportion of the literature on metal films in general. Although the mechanisms of growth of metal films have been the subject of excellent reviews such as those of Lewis and Anderson (1), Robins (2), and Le Lay and Kern (3), these articles have tended to concentrate on growth from the nucleation stage onwards. Much less attention has been paid to the pre-nucleation stage.In the present review, attention will therefore be focussed mainly upon this pre-nucleation stage and specifrcally upon the interaction of evaporated gold with surfaces and the growth of the first few atomic monolayers of films of this metal. Particular attention will be paid to the early stages of growth of gold films on semiconductor surfaces as a large research effort has been concentrated recently in this area. The reason for this is the extensive use of such films in the establishment of electrical contacts of the ohmic and Schottky types.Gold films on silicon and GaAs usually foren Schottky barriers even at monolayer (ML) thicknesses. A detailed knowledge of the mechanisms by which they are formed on these semiconductors is therefore of great importance. The film growth has been found to differ according to whether it occurs on clean ordered surfaces or upon surfaces which are either disordered per se or as .a result of the presence of contaminants.For the study of the growth of gold films especially at monolayer level on clean or ordered surfaces, such as those of clean silicon or GaAs, ultra high vacuum (UHV) techniques and analytical methods such as Auger electron spectroscopy (AES), photoelectron spectroscopy (PES) and electron diffraction have been all-important. Initial film growth is characterized by strong interactions between gold atoms and the substrate surface, leading to intermixing of the metal and the substrate. At low temperatures, typically room temperature, the first monolayer of gold is deposited in a disordered state, and gives rise to the subsequent formation of a mixed compound layer (silicide or alloy) upon which nucleation of gold may occur. At elevated temperatures (typically several hundred Celsius), reconstructions occur within the first monolayer of gold on silicon. Interdiffusion is fast and in thicker films of gold, on GaAs for example, leads to a thick intermixed region. The presence of small controlled amounts of impurities on clean surfaces of silicon and GaAs leads to a marked change in the surface reactions with evaporated gold. With increased impuri...

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“…The Au/GaAs barrier height is dependent on the defects that are present at the interface, alloying between the metal and semiconductor layers and interdiffusion. The opposite is true of Au/Si Schottky barrier height, where data is reproducible and has very little variation [25,26,27]. This early worked proved that I B − V spectra taken with the STM using BEEM technique was in fact a direct measurement of the Schottky barrier height and the interface electrostatics of the Schottky barrer.…”

Section: Ballistic Electron Emission Microscopymentioning

confidence: 90%

“…The acceptance cone is specific to the energy of the electron, E e , and the barrier height of metal-semiconductor system at that location of the STM tip. The Fermi energy, E F , also gives more material-specific values of the critical angle 27) where the critical angle is the maximum angle which the electron can be de- flected away from k ⊥ due to elastic scattering. That is, if an electron is scattered at some angle away from normal to the interface, then the perpendicular momentum of the electron is decreased by some amount and the parallel momentum is increased by some amount.…”

Section: Elastic Scatteringmentioning

confidence: 99%

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

Nolting

Durcan

Gassner

et al. 2018

Journal of Applied Physics

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The electrostatic barrier at a metal semiconductor interface is visualized using nanoscale spatial and meV energetic resolution. A combination of Schottky barrier mapping with ballistic electron emission microscopy and computational modeling enables extraction of the barrier heights, the hot electron scattering, and the presence of localized charges at the interface from the histograms of the spectra thresholds. Several metal semiconductor interfaces are investigated including W/Si(001) using two different deposition techniques, Cr/Si(001), and mixed Au-Ag/Si(001). The findings demonstrate the ability to detect the effects of partial silicide formation in the W and Cr samples and the presence of two barrier heights in intermixed Au/Ag films upon the electrostatic barrier of a buried interface with nanoscale resolution. This has potential to transform the fundamental understanding of the relationship between electrostatic uniformity and interface structure for technologically important metal semiconductor interfaces.

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Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

Cited by 174 publications

References 43 publications

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Schottky barrier formation at the Au to rare earth doped GaN thin film interface

The initial growth of vapour deposited gold films

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

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