Photoelectrochemical performances of AgInS2 film electrodes fabricated using the sulfurization of Ag–In metal precursors

Tunable photoluminescence from the visible to near-infrared wavelength region of non-stoichiometric AgInS2 nanoparticles

“…26.7 observed for N Ag /N metal ¼ 0.5 was slightly shifted to a higher diffraction angle at 27.3 for N Ag /N metal ¼ 0.1, which was expected for the diffraction of the (311) plane of the AgIn 5 S 8 phase. Since Cheng et al have reported that the AgIn 5 S 8 phase appeared when the molar ratio of N Ag /N metal in the starting material was below 0.44 for preparation of a bulk AIS film, 31 these observations suggested that the low Ag content in OLA-AIS particles may result in the formation of a secondary phase of cubic AgIn 5 S 8 . Furthermore, with an increase in the ratio of N Ag /N metal in preparation to 0.7, the diffraction peak at around 2q ¼ 27 became broader than that obtained for N Ag /N metal ¼ 0.5, along with the development of a diffraction peak at ca.…”

Photoelectrochemical performances of kesterite Ag 2 ZnSnSe 4 photoelectrodes in the salt-water and water solutions

“…In order to avoid the photocorrosion taking place at the surfaces of these metal sulfides/selenides in aqueous solutions, sacrificial agents have to be added into the electrolytes [4,5] . In order to improve this weakness for binary metal sulfides/selenides, I-III-VI metal chalcogenides such as CuInS 2 , AgInS 2 and Ag(In,Ga)S 2 have been reported as the photoelectrodes in PEC cells and showed good PEC performances in the various electrolytes [10][11][12] . However, due to the high costs of In and Ga elements, I-III-VI metal chalcogenides may limit their possible applications for large scale solar-driven water splitting.…”

Structural and Photoelectrochemical Evaluation of Nanotextured Sn‐Doped AgInS2 Films Prepared by Spray Pyrolysis

“…This is particularly true considering that previous studies have shown that the properties of AIS are highly dependent on the method of synthesis. For example, AIS made by electrodeposition gave films with carrier concentrations of 10 19 cm −3 ,30 whereas AIS made by sulfurization of Ag‐In metal gave films with a resistivity of 10 4 Ω cm and carrier concentrations of 10 12 cm −3 ,31 and AIS synthesized by hot‐wall epitaxy onto GaAs displayed carrier concentrations of 10 17 cm −3 32. Other films synthesized by using spray pyrolysis yielded AIS with resistivities between 10 3 –10 5 Ω cm 33.…”

“…For instance, Sn is a dopant in n‐type CIS;35, 36 however, p‐type AIS was also formed through doping with Sn 37. 38 In most of the previous work related to AIS characterization, the properties were determined by using solid‐state methods such as hot‐probe, thermoelectric, or Hall measurements; the relevant photoelectrochemical measurements have not been performed for any of the p‐AIS materials and have only recently been pursued for n‐AIS and Ga‐doped n‐AIS 31. 39…”

“…Here, we report a systematic study on the effect of annealing conditions and Sn doping on the optical, electrical, and photoelectrochemical properties of AIS prepared by spray pyrolysis with the hope of shedding more light on the characteristics needed for high performance photoelectrodes. Compared to other methods to synthesize AgInS 2 , such as hot‐wall epitaxy,40 chemical‐bath deposition,41 electrodeposition,30 co‐evaporation,34 and sulfurization of metal films,31 it is easy to obtain large‐scale, high‐quality films by using spray pyrolysis. The effect of annealing the deposited films under a N 2 or S atmosphere was investigated to control the crystallinity and understand the role of S vacancies on the AIS films.…”