Photoelectrochemical performance of thermally sulfurized CdxZn1-xS photoanode: Enhancement with reduced graphene oxide support

Construction of Photothermo-Electro Coupling Field Based on Surface Modification of Hydrogenated TiO2 Nanotube Array Photoanode and Its Improved Photoelectrochemical Water Splitting

“…Figure S4 shows that all photoanodes have ntype semiconductor characteristics as their OCVD curves under light shift to a negative direction compared to those in darkness. 54,55 The average charge carrier lifetime (τ n ) as a function of open circuit voltage (OCV) can be calculated by using the equation 56 :…”

“…where N d is the majority charge carrier density, ε 0 is the permittivity of the vacuum (8.85 × 10 −12 F•m −1 ), ε is the relative dielectric constant of the photoelectrode (55 for TNA and H-TNA, 37,59 8.7 for CZS/H-TNA and NP/CZS/H-TNA). 55,60 e 0 is the elementary charge (1.60 × 10 −19 C), and E is the applied potential to the photoanode. d(C −2 )/dE is the straight slope in the M−S plot.…”

“…Therefore, we investigated the lifetime of the generated carriers by analyzing the open circuit voltage decay (OCVD) curves. Figure S4 shows that all photoanodes have n-type semiconductor characteristics as their OCVD curves under light shift to a negative direction compared to those in darkness. , The average charge carrier lifetime (τ n ) as a function of open circuit voltage (OCV) can be calculated by using the equation: τ n = false( k T / e 0 false) ( d false[ OCV false] / d t ) − 1 where kT and e 0 are the thermal energy and elementary charge, respectively. The NP/CZS/H-TNA photoanode, as depicted in Figure S5a, demonstrates the longest average carrier lifetime among all photoanodes.…”

“…Figure a,b illustrates the M–S plots in dark conditions for different photoanodes, wherein the positive slope observed in each sample’s M–S plot indicates their n-type semiconductor properties. Furthermore, the charge carrier density can be estimated using the following equation , : N d = 2 e 0 ε ε 0 [ d false( C − 2 false) d E ] − 1 where N d is the majority charge carrier density, ε 0 is the permittivity of the vacuum (8.85 × 10 –12 F·m –1 ), ε is the relative dielectric constant of the photoelectrode (55 for TNA and H-TNA, , 8.7 for CZS/H-TNA and NP/CZS/H-TNA). , e 0 is the elementary charge (1.60 × 10 –19 C), and E is the applied potential to the photoanode. d( C –2 )/d E is the straight slope in the M–S plot.…”

Metal Phthalocyanine Sensitized Photoelectrochemical Cell Assembling with Azide‐Functionalized Reduced Graphene and Quaternary Metal Chalcogenide Composites

“…Thus, in this study, we aim to use RGO‐N 3 structure in the semiconductor composite to facilitate conductivity and charge carrier transport rate of the model semiconductors. CdZnNiSSe quaternary metal chalcogenide structure was chosen as the model semiconductor in this study, since, we obtained the highest PEC performance with the RGO/CdZnNiSSe (5.00 mA cm −2 at 0.8 V vs RHE) composite [22] among the metal chalcogenide‐based semiconductors we published in our previous studies [20,22–25] . Different from our previous studies, here we used RGO‐N 3 instead of RGO, and we prepared CdZnNiSSe/RGO‐N 3 composite as the semiconductor composite.…”