Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond

Abstract

Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.

High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate

“…The crystal structure of AlN/(001) diamond was analyzed by cross-sectional TEM and NBD with incident electron beam along diamond [1][2][3][4][5][6][7][8][9][10]. The crystal properties of AlN/(001) diamond structure were characterized by XRD measurements.…”

“…[1] In addition, because diamond has a high thermal conductivity of 22 Wcm À1 K À1 and high breakdown voltage of 10 MV cm À1 , it is expected to produce a field-effect transistor (FET) with excellent heat dissipation, low power consumption, and high breakdown voltage. [5] In contrast, III-nitride semiconductor Al x Ga 1Àx N has been extensively studied for deep ultraviolet light-emitting diodes (UV-LEDs) and high-electron mobility transistors (HEMTs), though its poor p-type conductance limits its performance in bipolar devices. [5] In contrast, III-nitride semiconductor Al x Ga 1Àx N has been extensively studied for deep ultraviolet light-emitting diodes (UV-LEDs) and high-electron mobility transistors (HEMTs), though its poor p-type conductance limits its performance in bipolar devices.…”

“…[5] In contrast, III-nitride semiconductor Al x Ga 1Àx N has been extensively studied for deep ultraviolet light-emitting diodes (UV-LEDs) and high-electron mobility transistors (HEMTs), though its poor p-type conductance limits its performance in bipolar devices. [8,9] The epitaxial relationship between AlN and diamond was reported as (0001) AlN || (111) [1][2][3][4][5][6][7][8][9][10] diamond. For example, Al x Ga 1Àx N/diamond structures are expected to be applied in high-efficiency UV-LEDs and high-power and -frequency devices.…”

Quantifying nanodiamonds biodistribution in whole cells with correlative iono-nanoscopy

“…The stimulation of NV centers has been implemented optically 13,24,25 , electrically 26,27 , and also in the form of cathodoluminescence 28,29 . Here, we report the efficient excitation of NV centers in nanodiamonds by a focused beam of MeV helium ions, which results in photon emission in the form of ionoluminescence.…”

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

“…In our future work we will perform a more systematic study of the correlation between the structural defects and their effect on charge trapping and space charge distribution. In addition to correlation with X-ray topography, it will be enlightening to explore correlations with other defect imaging methods, such as the recently reported photoelectrical readout of single defects 15 .…”