A novel fabrication process of hexagonal aluminum nitride (AlN)/(001) diamond by means of sputtering and high‐temperature annealing is proposed. Crystallinity of the AlN is significantly improved by the annealing, leading to full width at half maximum (FWHM) of the AlN(0002) diffraction X‐ray rocking curve (XRC) of 1490 arcsec for the AlN thickness of 400 nm. The in‐plane epitaxial relationship in AlN/diamond structure is stabilized in the single domain of (0001) [11–20] AlN || (001) [110] diamond on single‐crystal diamond substrates with off‐cut angle along [110]. Transmission electron microscopy and nano‐beam electron diffraction indicate the existence of an epitaxial graphite layer exhibiting an epitaxial relationship of (0001) [11–20] AlN || (1–100) [0001] graphite || (001) [110] diamond. The demonstration of single‐domain hexagonal AlN/(001) diamond structure provides a cost‐effective, mass production approach for realizing AlxGa1−xN/diamond devices for electronic and optoelectronic applications.
Corrosion resistance of coated TiN film is governed by pinhole defect. Therefore, it is necessary to evaluate the existing state of defects. The Critical Passivation Current Density (CPCD) method had some problems though this method could quantitatively estimate defects as a pinhole defect ratio (%). The most important problem is the overestimation in defect ratio evaluation in the cases when large corrosion pits were generated and some parts of TiN films were exfoliated due to its low adhesion strength and high residual stress. Therefore in this study, the adhesion characteristics of TiN films which was coated by plasma CVD was investigated by the scratch test. The applicable range of the CPCD test was made clear for the defect ratio evaluation of TiN films with various film thickness and adhesion strength. And then, some improvements of CPCD test for avoiding the overestimation of defect in film are discussed.
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