Photoelectric yield spectra of Metal-Semiconductor structures

Engström, Olof; Pettersson, H.; Sernelius, Bo E.

doi:10.1002/pssa.2210950239

Cited by 14 publications

(4 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interface dipole and the SBH at these interfaces are expected to vary locally. Evidence for the presence of inhomogeneity in the SBH's was recognized and reported only sporadically before the 1990s, [124][125][126] and serious attention was not paid to the issue of SBH inhomogeneity. The development of the ballistic electron emission microscopy (BEEM) technique 127,128 provided the spatial resolution needed to examine the distribution of local SBH underneath ultrathin metal layers.…”

Section: E Inhomogeneous Sbhmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,036

479

View full text Add to dashboard Cite

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

show abstract

Section: E Inhomogeneous Sbhmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,036

479

View full text Add to dashboard Cite

show abstract

“…2,3 More recently, experimental investigations of epitaxial MS interfaces suggest that the barrier heights depend on the structure of the MS interface. [5][6][7] Theoretical modeling of the effect of such inhomogeneities on the electron transport appears to be rather successful in accounting for a wide variety of properties including temperature dependence of electron transport properties at the interface as well as the variation of the ideality factor of the Schottky barriers. Some investigations have recognized the presence of inhomogeneities and their effect on diode characteristics.…”

Section: Introductionmentioning

confidence: 99%

Electron transport at Au/InP interface with nanoscopic exclusions

Anand

Carlsson

Deppert

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

We present an investigation of electron transport at the Au/InP metal semiconductor ͑MS͒ interface in the presence of nanoscopic barrier inhomogeneities. In particular, we focus on the transport regime wherein the low barrier inhomogeneous regions are pinched off by the depletion potential of the surrounding higher barrier region. To realize this, we have fabricated a composite MS structure comprising of a known density of nanometer sized Ag aerosol particles on InP overlayed by a uniform Au film. Temperature dependent current-voltage ͑I -V͒ measurements were performed to characterize the electron transport at the composite MS interface. The experimental observations are explained using a simple model for the MS junction current in which the Ag/InP regions are assumed to be identical and noninteracting. Our results clearly demonstrate that the electron transport at the MS interface is significantly affected by low barrier regions even in the pinch-off regime. In addition, the influence of the particle density and the Ag/InP barrier heights on the diode characteristics is also investigated. It is suggested that Schottky barrier inhomogeneities could be the main source of the usually observed larger-than-unity ideality factors in diodes. Furthermore, our results indicate possibilities of using such composites to explore the physics and applications of nanoinjecting contacts.

show abstract

“…The most likely reason for these deviations from the ideal behavior can be attributed to a spatially inhomogeneous barrier height across the metal-semiconductor (MS) interface. To determine this impact, first experiments date back in the 1980s [21][22][23]. A nonuniformity of the SBH across the interface is obvious, as most MS interfaces are made of a polycrystalline metallization, consisting of regions with different crystallographic orientations as well as grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes

Triendl

Pfusterschmied

Pobegen

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

p-Si/4H-SiC heterojunction diodes are realized by sputter-deposition of the Si top contact and subsequent post-deposition annealing at either 900 °C or 1000 °C. The high Schottky barrier height (SBH) of this junction architecture of around 1.65 V is ideal to analyze SBH inhomogeneities present in most Schottky- and heterojunctions. Current-voltage-temperature (IVT) and capacitance-voltage-temperature (CVT) measurements are conducted in a wide temperature range from 60 K up to 460 K while applying standard techniques for SBH extraction. Strong deviations from ideal IV characteristics are present especially at lowest temperatures when assuming a homogenous SBH. Additionally, the extracted SBHs at low temperatures differ a lot between the two methods, indicating the presence of low barrier conduction paths. The presence of at least two distinct SBH inhomogeneities is found, which are labeled as ‘intrinsic’ and ‘extrinsic’. Next, the Tung model was applied to fit the measured IVT data using a discretized Gaussian distribution of patch parameters to account for spreading resistance effects. By using multiple Gaussian distributions, excellent fitting results were achieved, giving the density values of the different patches and a background barrier height from the IVT data, which are in excellent agreement with the CVT data over a wide temperature range of 400 K.

show abstract

Photoelectric yield spectra of Metal-Semiconductor structures

Cited by 14 publications

References 23 publications

The physics and chemistry of the Schottky barrier height

The physics and chemistry of the Schottky barrier height

Electron transport at Au/InP interface with nanoscopic exclusions

Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes

Contact Info

Product

Resources

About