Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Koppens, Frank H. L.; Mueller, Thomas; Avouris, Phaedon; Ferrari, Andrea C.; Vitiello, Miriam S.; Polini, Marco

doi:10.1038/nnano.2014.215

Cited by 3,168 publications

(2,718 citation statements)

References 149 publications

Supporting

Mentioning

2,655

Contrasting

Unclassified

Order By: Relevance

“…The electronic band diagram of graphene shows a linear energy dispersion at the K point, thus resulting in a gapless band structure 1, 20, 133, 134, 135, 136, 137, 138, 139. Consequently, the gapless band structure of graphene results in the low controllability of electronics and inferior photoresponsivity,2, 5, 27, 134 which impedes the applications in electronics and optoelectronics.…”

Section: Crystal Structuresmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

View full text Add to dashboard Cite

As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

show abstract

Section: Crystal Structuresmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10] The bandgap of monolayer TMDCs occurs at the inequivalent (but degenerate) K and K' points of the hexagonal Brillouin zone. The broken inversion symmetry of a TMDC monolayer combined with the time reversal symmetry imposes opposite magnetic moments at the K and K' valleys.…”

Section: Introductionmentioning

confidence: 99%

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS₂/MoSe₂/MoS₂ Trilayer van der Waals Heterostructures

et al. 2017

View full text Add to dashboard Cite

Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe 2 is completely recovered if the material is sandwiched in MoS 2 /MoSe 2 /MoS 2 trilayer van der Waals heterostructures. We show by means of density-functional theory that this 1 arXiv:1703.00806v2 [cond-mat.mes-hall] 14 Jun 2017 remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS 2 layers are donated to heal Se vacancy defects in the middle MoSe 2 layer. In addition, the trilayer structure exhibits a considerable charge-transfer mediated valley polarization of MoSe 2 without the need for resonant excitation. Our fabrication approach, relying solely on simple flake transfer technique, paves the way for the scalable production of large-area TMDC materials with excellent optical quality. KeywordsChemical Vapor Deposition, transition metal dichalcogenides, van der Waals heterostructures, defect healing, charge transfer mediated valley polarization Monolayer transition metal dichalcogenides (TMDC) have a direct bandgap situated in the visible range, which makes them ideal building blocks for novel electronic and optoelectronic devices. [1][2][3][4][5][6][7][8][9][10] The bandgap of monolayer TMDCs occurs at the inequivalent (but degenerate) K and K' points of the hexagonal Brillouin zone. The broken inversion symmetry of a TMDC monolayer combined with the time reversal symmetry imposes opposite magnetic moments at the K and K' valleys. This in turn determines the characteristic circular dichroism exhibited by these materials, wherein each valley can be addressed separately with circularly polarized light of a given helicity. 11-13 Additionally, optical spectra are influenced by the strong spin-orbit coupling, which lifts the degeneracy of band states at the valence band edges, resulting in well-resolved A and B resonances, as observed in reflectivity or absorption spectra. 2,14-16 The interplay of spin-orbit coupling with broken inversion symmetry and time reversal symmetry locks the valley and spin degrees of freedom, making TMDC attractive candidates for valleytronics. 17 The spin-valley index locking along with the large 2 distance in the momentum space between K and K' valleys preserves the valley polarization observed in the degree of circular polarization (DCP) in helicity resolved photoluminescence emission. [18][19][20][21][22] Applications require a scalable fabrication platform providing high-quality large-area monolayer TMDC. Unfortunately, the most promising approach today, namely chemical vapor deposition (CVD) growth 23-27 struggles to compete with exfoliated TMDC in terms of sample quality. Low temperature PL spectroscopy of CVD-grown MoS 2 and MoSe 2 reveals broad emission from defect bound excitons, which is significantly more intense than the free exciton peak [28][29][30] and is related to chalcogen vacancies induced...

show abstract

“…The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon bio-sensing with direct-electricreadout, eliminating the need of complicated optics.Graphene-based photodetectors (PDs) [1,2] have been reported with ultra-fast operating speeds (up to 262GHz from the measured intrinsic response time of graphene carriers [3]) and broadband operation from the visible and infrared [3][4][5][6][7][8][9][10][11][12][13][14][15][16] up to the THz [17][18][19]. The simplest graphene-based photodetection scheme relies on the metal-graphene-metal (MGM) architecture [5,7,8,11,[20][21][22], where the photoresponse is due to a combination of photo-thermoelectric and photovoltaic effects [5,7,8,11,[20][21][22].…”

mentioning

confidence: 99%

Surface Plasmon Polariton Graphene Photodetectors

et al. 2015

View full text Add to dashboard Cite

The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs separate, limits the photoactive region to sub-micron length scales. Here, we couple graphene with a plasmonic grating and exploit the resulting surface plasmon polaritons to deliver the collected photons to the junction region of a metal-graphenemetal photodetector. This results into a 400% enhancement of responsivity and a 1000% increase in photoactive length, combined with tunable spectral selectivity. The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon bio-sensing with direct-electricreadout, eliminating the need of complicated optics.Graphene-based photodetectors (PDs) [1,2] have been reported with ultra-fast operating speeds (up to 262GHz from the measured intrinsic response time of graphene carriers [3]) and broadband operation from the visible and infrared [3][4][5][6][7][8][9][10][11][12][13][14][15][16] up to the THz [17][18][19]. The simplest graphene-based photodetection scheme relies on the metal-graphene-metal (MGM) architecture [5,7,8,11,[20][21][22], where the photoresponse is due to a combination of photo-thermoelectric and photovoltaic effects [5,7,8,11,[20][21][22]. For both mechanisms, the presence of a junction is required to spatially separate excited electronhole (e-h) pairs [5,7,8,11,[20][21][22]. At the metal-graphene junction, a work-function difference causes charge transfer and a shift of the graphene Fermi level underneath the contact [4,5,7,23], compared to that of graphene away from the contact [4,5,7,23], resulting into a build-up of an internal electric field (photovoltaic mechanism) [5,7,24,25] and into a difference of Seebeck coefficients (photo-thermoelectric mechanism) [11,21,26]. An alternative way to create a junction is to use a set of gate electrodes to electrostatically dope graphene [8,11].

show abstract

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Cited by 3,168 publications

References 149 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS₂/MoSe₂/MoS₂ Trilayer van der Waals Heterostructures

Surface Plasmon Polariton Graphene Photodetectors

Contact Info

Product

Resources

About

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Cited by 3,168 publications

References 149 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 Trilayer van der Waals Heterostructures

Surface Plasmon Polariton Graphene Photodetectors

Contact Info

Product

Resources

About

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS₂/MoSe₂/MoS₂ Trilayer van der Waals Heterostructures