Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors

Klingenstein, M.; Kühl, J.; Rosenzweig, J.; Moglestue, C.; Hulsmann, A.; Schneider, J.; Köhler, K.

doi:10.1016/0038-1101(94)90086-8

Cited by 75 publications

(19 citation statements)

References 20 publications

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“…To show the effect of plasmonic clusters on carrier generation, we used aluminum nanoparticles with the oxide coverage of t ox = 2 nm. In this regime, the generated large carrier concentration causes Schottky barrier lowering which could contribute to the enhancement of the photocurrent [54,55]. The above comparison between non-plasmonic and plasmonic UV detectors can be further illustrated by plotting corresponding E-field maps for the excited electric field at the surface of the GaN, below the antennas, as shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors

Ahmadivand¹,

Raju²,

Vabbina³

et al. 2016

Opt. Express

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We report on an integrated plasmonic ultraviolet (UV) photodetector composed of aluminum Fano-resonant heptamer nanoantennas deposited on a Gallium Nitride (GaN) active layer which is grown on a sapphire substrate to generate significant photocurrent via formation of hot electrons by nanoclusters upon the decay of nonequilibrium plasmons. Using the plasmon hybridization theory and finite-difference time-domain (FDTD) method, it is shown that the generation of hot carriers by metallic clusters illuminated by UV beam leads to a large photocurrent. The induced Fano resonance (FR) minimum across the UV spectrum allows for noticeable enhancement in the absorption of optical power yielding a plasmonic UV photodetector with a high responsivity. It is also shown that varying the thickness of the oxide layer (Al₂O₃) around the nanodisks (tox) in a heptamer assembly adjusted the generated photocurrent and responsivity. The proposed plasmonic structure opens new horizons for designing and fabricating efficient opto-electronics devices with high gain and responsivity.

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Section: Resultsmentioning

confidence: 99%

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors

Ahmadivand¹,

Raju²,

Vabbina³

et al. 2016

Opt. Express

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“…With this definition, the UV to visible rejection ratio at 1 V bias were estimated to be 56. Such high responsivity and rejection ratio of our device suggest that our sample is very suitable for the light detection in the ultraviolet region [18].…”

Section: Resultsmentioning

confidence: 76%

Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures

Young

Liu

et al. 2008

Journal of Crystal Growth

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“…Previously, electron and/or hole trapping have been cited as the cause of low frequency gain in MSM detectors, 16 and both dark current soft-breakdown characteristics (barrier lowering) and photocurrent gain have been attributed 3 to surface states. It is interesting that passivation has eliminated low frequency gain here, but not significantly altered the dark current.…”

Section: Discussionmentioning

confidence: 99%

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

DeCorby

MacDonald

Beaudoin

et al. 1997

Journal of Elec Materi

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We report the reduction of low frequency gain and surface recombination in InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors, by surface passivation with plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride. A corresponding improvement in device speed, measured in the frequency-domain, is demonstrated. Large (100 µm) 2 devices exhibit neartransit-time-limited bandwidth (>10 GHz) following passivation, and device characteristics have been stable over a period of several months. We propose a physical model for electron trapping at the free surface, to explain the low frequency gain in nonpassivated devices and its subsequent elimination.

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Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors

Cited by 75 publications

References 20 publications

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors

Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

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