Gallium–zinc
oxynitride (GZNO) is a promising material system
for solar-driven overall water splitting, as it exhibits a tunable
band gap in the visible range, beneficial positions of valence and
conduction band edges, and promising long-term stability. Fabrication
of GZNO is traditionally accomplished via a solid state reaction pathway.
This limits the growth of thin films or large single crystals and
the precise control of the composition, which complicates investigations
about fundamental properties of the material, including, for example,
the influence of the single constituent ratios on the band gap. In
this work, we present the growth of GZNO thin films on sapphire by
plasma-assisted molecular beam epitaxy (MBE). The thin films exhibit
a crystallite size of up to 50 nm and a wurtzite crystal structure
with distinct short-range disorder. Variations of Ga/Zn and N/O flux
ratios are found to influence the optical absorption edge of the alloy
without major impact on the Urbach energy. Controlled change of the
composition of the alloy reveals that the band gap reduction is caused
by both an increased valence band energy, which is correlated with
the N content, and a decrease of the conduction band energy which
is induced by increasing Zn content. Based on these findings, GZNO
thin films with band gaps of down to 2.0 eV were fabricated and their
photoelectrical properties assessed. Using MBE, we overcome compositional
restrictions typically associated with stoichiometric GaN:ZnO solid
solutions and provide unprecedented access to new compounds within
this materials class. In doing so, we elucidate the specific role
of individual elements on band edge energetics and demonstrate new
routes to band gap engineering for future photocatalytic and photoelectrochemical
applications.