Photoconductive semiconductor switches

Loubriel, G.M.; Zutavern, F.J.; Baca, Albert G.; Hjalmarson, Harold P.; Plut, T.A.; Helgeson, W.D.; O'Malley, M.W.; Ruebush, M.; Brown, Doug

doi:10.1109/27.602482

Cited by 108 publications

(28 citation statements)

References 7 publications

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“…In pulsed power applications, the photoconductive semiconductor switches (PCSSs) offer many advantages such as low timing jitter, fast response, high repetition rate, compact size and easy integration [3]. Linear and nonlinear modes are the two running regimes of the PCSS [4].…”

Section: Introductionmentioning

confidence: 99%

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Amari

Angelis²,

Arnaud‐Cormos³

et al. 2011

IEEE Photon. Technol. Lett.

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In this letter, an experimental and quantitative study on the resistance behavior of a photoconductive semiconductor switch (PCSS) is reported. The study of the PCSS behavior is important for an accurate integration in a nanosecond pulse shaping generator. The effect of the bias voltage and the optical pulse energy on the switching efficiency is presented. The shift of the PCSS absorption threshold under the bias voltage is also described. The minimum resistance reached by the silicon semiconductor during the temporal switching is 3.8 for 4-kV bias voltage and 48-J optical energy.Index Terms-High voltage, nanosecond and picosecond pulse generator, optical energy, photoconductive switch resistance, voltage-switching efficiency.

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Section: Introductionmentioning

confidence: 99%

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Amari

Angelis²,

Arnaud‐Cormos³

et al. 2011

IEEE Photon. Technol. Lett.

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“…The optical Synthetic Aperture Radar or high voltage device switches have also the same constitution. Only the length synchronization and the measurement of radar cross and the diameter of the doped silicon are a little bit larger section [8]. Also they can be employed in to be easily polarised with higher DC voltage.…”

Section: B Bipolarpulsesmentioning

confidence: 99%

Ultra-Wideband Electrical Pulse Generator Using Photoconductive Semiconductor Switches

Vergne¹,

Couderc²,

Barthélémy³

et al. 2005

2005 IEEE Pulsed Power Conference

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switching, i.e. 10kV electrical pulse needs several tens of millijoules of optical energy [3]. However we realize the We achieved the generation of unipolar and bipolar generation of electrical pulses between 43ps to 400ps ultra-wideband electrical pulses by using a (FWHM) with maximum peak voltage of 10700V and photoconductive device. It relies on a doped silicon by using 1.2mJ of optical energy, which is 10 to 100 substrate which is used in the linear mode with less times lower than the energy currently published. These optical energy than usually published. This running mode specifications are obtained by using the innovative allows the synchronisation of several sources with a technology of the French Atomic Energy Commission timing jitter less than 5ps. However it permits to control (CEA) based on doped silicon substrate. The important the low frequency components of the bipolar generator benefit of linear mode is the low timing jitter which is by means of the synchronisation of two photoconductors. involved in the switching process. So we generated unipolar pulses from 43ps to 300ps of Also bipolar pulses have been generated. It can be duration (Full Width at Half Maximum: FWHM) with obtained by means of different devices: impulse forming peak voltage up to 1*0700V and bipolar pulses between networks, fast recovery diodes and shorted transmission 200ps and 450ps of cycle length with 3000V of peak lines, spark gap switched transmission lines or voltage.radiofrequency MOSFET switched capacitors. However, only low voltage switching has been demonstrated in picoseconds duration. Higher voltage switching was

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“…1-5 A number of experimental investigations have been performed to characterize the electrical and optical properties of the highgain PCSS's. [6][7][8] In this letter we use the model of luminous charge domain to analyze the periodicity and weakening surge of GaAs PCSS's. 9,10 The PCSS's used in our experiments have a resistivity of Ͼ5 ϫ 10 7 ⍀ cm in total darkness.…”

Section: Mechanism Analysis Of Periodicity and Weakening Surge Of Gaamentioning

confidence: 99%

Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

Shi

Tian

2006

Applied Physics Letters

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The authors analyze the periodicity and weakening surge of semi-insulating GaAs photoconductive semiconductor switches. It is shown that the periodicity and weakening surge of the output current wave form is caused by the self-excitation of the circuit. The electric field threshold ET and the sustaining electric field Es (the minimum electric field required to support the domain) are modulated by the ac electric field; the output wave form becomes two main modes of transelectron oscillator, namely, delayed domain mode and quenched domain mode.

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Photoconductive semiconductor switches

Cited by 108 publications

References 7 publications

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Characterization of a Linear Photoconductive Switch Used in Nanosecond Pulsed Electric Field Generator

Ultra-Wideband Electrical Pulse Generator Using Photoconductive Semiconductor Switches

Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

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