Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

Shi, Wei; Tian, Liqiang

doi:10.1063/1.2387120

Cited by 35 publications

(9 citation statements)

References 14 publications

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“…From equation (10), the peak of the terahertz radiation field is proportional to the life time of the carrier. The longer of the carrier lifetime, the higher of the peak of the radiation filed.…”

Section: The Continuity Equation For Electrons Is the Formmentioning

confidence: 99%

Studying of the temporal characteristics of THz from photoconductor switches

Shi

Wang

2007

SPIE Proceedings

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We have studied the temporal characteristics of terahertz radiation generated by a biased photoconductor antennas triggered by an ultra-short optical pulse. The calculations are based on the current surge model of carrier transport in semiconductors. In our model, we include screening of the bias field by the space charge induced by carrier transport and by the generated terahertz radiation in the model, describing the electromagnetic radiation from a large aperture photoconductor. The surface current density affected by screening, the influence of the exciting optical pulse, timedependent surface conductivity and time-dependent mobility are also taken into account in the model to describe the electromagnetic radiation from photoconductor antennas. Use these expressions the effect of the optical influence, the surface current density and time-dependent conductivity and mobility have been discussed in detail. The results show that new calculation model is more suitable for photoconductor antennas.

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Section: The Continuity Equation For Electrons Is the Formmentioning

confidence: 99%

Studying of the temporal characteristics of THz from photoconductor switches

Shi

Wang

2007

SPIE Proceedings

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“…According to the modified Drude-Lorentz theory, [12,13] THz far field radiation far E r can be expressed as below, …”

Section: Electrode Gapmentioning

confidence: 99%

Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps

et al. 2009

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Many factors influence the radiation power of terahertz (THz) emitters including photoconductive substrate material, antenna geometrical structure and excite light power. In this paper we mainly focus on the performance of semi-insulating (SI) GaAs photoconductive antennas with different geometrical sizes. Three kinds of antennas were prepared with the same structure, material and electrode width (100µm), but with different electrodes gaps of 50µm, 100µm and 150µm, respectively. They were excited by a femto-second fiber laser and tested with THz generation capability. It turns out that the three antennas have a same spectrum scope of 0.2-3THz. The small gap antenna can emit higher THz radiation with lower voltage but it was easy to burn down, that's why a large gap is needed to get higher THz power. Triggered by the same laser of several nJ, peak frequency moves to high frequency with decrease of electrode gaps. Radiation field screening is the dominant causation.

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“…In the coplanar electrode structure, positive and negative electrodes of the PCSS are normally placed on the same side of the semiconductor material. This electrode configuration provides easy manufacturing, simple semiconductor processing, large laser incident surface between the electrodes, and straightforward adjustment of the space between the electrodes to meet different requirements [13][14][15][16][17][18][19]. However, the surface breakdown of the coplanar electrode structure is more likely to occur under high voltage.…”

Section: Introductionmentioning

confidence: 99%

Breakdown Behavior of GaAs PCSS with a Backside-Light-Triggered Coplanar Electrode Structure

et al. 2021

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The competitive relationship between the surface flashover of the coplanar electrodes and the body current channel was investigated. Breakdown behavior of GaAs photo-conductive semiconductor switch (PCSS) with a backside-light-receiving coplanar electrode structure was studied in this paper. GaAs PCSS was triggered by the laser pulse with an extrinsic absorption wavelength of 1064 nm. Special insulating construction was designed for GaAs PCSS, while the surface of the electrodes was encapsulated with transparent insulating adhesive. Our first set of experiments was at a bias voltage of 8 kV, and the surface flashover breakdown of GaAs PCSS was observed with 10 Hz triggering laser pulse. In the second experiment, at a bias voltage of 6 kV, the body current channel breakdown appeared on the backside of the GaAs PCSS. Compared with these results, the existence of a competitive relationship between the surface flashover breakdown and the body current channel breakdown of the GaAs PCSS was confirmed. When the bias voltage is set within a certain range (just reaching avalanche mode), GaAs PCSS with a backside-light-receiving coplanar electrode structure will undergo the body current channel breakdown. This finding is also consistent with the simulation results.

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Mechanism analysis of periodicity and weakening surge of GaAs photoconductive semiconductor switches

Cited by 35 publications

References 14 publications

Studying of the temporal characteristics of THz from photoconductor switches

Studying of the temporal characteristics of THz from photoconductor switches

Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps

Breakdown Behavior of GaAs PCSS with a Backside-Light-Triggered Coplanar Electrode Structure

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