Photoconducting properties of vacuum-deposited CdSe films

Buragohain, Mridul; Barua, K.

doi:10.1016/0040-6090(83)90069-x

Cited by 16 publications

(2 citation statements)

References 9 publications

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“…The slowness of decay process may be mainly due to the presence of impurities in the CdTe thin film which act as carrier traps. The traps hold the photo-induced charges for longer duration, extending the decay process [19,20]. The trapped electrons or holes have required energy to free from restricted volume supplied with thermal or optical energy.…”

Section: Photo-response Properties Of Cdte Thin Filmmentioning

confidence: 99%

A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film

Desai

Dhimmar

Modi

2016

Optik

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Section: Photo-response Properties Of Cdte Thin Filmmentioning

confidence: 99%

A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film

Desai

Dhimmar

Modi

2016

Optik

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“…CdSe thin films have been prepared by different workers [4,5] using different techniques. The photoconductive gain of the detectors depends on the method of preparation [6,7] and sensitization [8][9][10]. Freshly prepared CdSe films are generally very sensitive to atmospheric oxygen and the dark-and photoconductivity depend strongly on the level of oxygen adsorption in them.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of stable air-oxidized CdSe films prepared by thermal evaporation

Samanta

Chaudhuri

et al. 1996

Semicond. Sci. Technol.

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Stabilization of the electrical resistivity of CdSe thin films has been studied by air oxidation at room temperature (300 K). Depending on the film thickness, the dark-and photoconductance of the films stabilize over 12 to 25 days of air exposure. The variation of photosensitivity of the films has been explained on the basis of inherent slow recombination states (k centres) and oxygen-assisted conversion of selenium vacancy, cadmium vacancy, cadmium interstitial (V Se -V Cd -Cd i ) to cadmium vacancy-cadmium interstitial (V Cd -Cd i ) complexes. The variation of oxygen adsorption with film thickness is studied. The temperature variation of dark-and photoconductance measurements in these films reveals a thermal quenching of photoconductivity at about 265 K. The k centres are located at about 0.23 eV above the top of the valance band. A selenium vacancy-related level is revealed at about 0.12 eV below E c . This level disappears as a result of long time exposure of the films to atmospheric oxygen. An oxygen-assisted excitonic transition is revealed along with the band edge transition in the spectral distribution of photocurrent of oxygen-adsorbed stabilized films.

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Electrical properties of vacuum‐evaporated ZnTe films

Patel

1988

Cryst. Res. Technol.

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Photoconducting properties of vacuum-deposited CdSe films

Cited by 16 publications

References 9 publications

A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film

A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film

Electrical characterization of stable air-oxidized CdSe films prepared by thermal evaporation

Electrical properties of vacuum‐evaporated ZnTe films

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