Photochemical welding of silica microspheres to silicone rubber by ArF excimer laser

F2-laser-induced surface modification of iron thin films to obtain corrosion resistance

“…When we used a 193 nm ArF excimer laser (Coherent COMPexPro 110) for a complimentary experiment, instead of the F 2 laser, the Fe 3 O 4 layer was not formed on iron thin films. The same as in the case of silicone rubber and aluminum thin film, [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] to produce O( 1 D) atoms by the photodecomposition of O 2 molecules in air with the F 2 laser is essential for the present surface modification of iron thin film.…”

“…This work is based on our previous finding; i.e., silicone ([SiO(CH 3 ) 2 ] n ) rubber is photochemically modified into carbon-free silica (SiO 2 ) by F 2 laser irradiation. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] The use of the F 2 laser is essential for accomplishing the photochemical reactions; active oxygen [O( 1 D)] atoms can be effectively obtained through the photodecomposition of O 2 molecules in air. The strong oxidation reaction can take place on the silicone rubber surface with the O( 1 D) atoms.…”

Fs-laser processing of polydimethylsiloxane

“…In particular, UV nanosecond laser pulses (e.g., KrF, ArF, and F 2 ) are largely applied for fabrication of optical elements, 7-9 deposition of thin films, 10-12 modification of optical properties, [13][14][15] and surface processing or functionalization. [16][17][18][19][20][21][22] For example, KrF excimer laser (k ¼ 248 nm) processing of siloxane-based flexible silicone rubber is used to photo-decompose the sample surface changing the surface relief. 2,[22][23][24] Information on the changes to the PDMS structures irradiated by ns-laser pulses is typically obtained by l-Raman measurements.…”

F2-Laser-Induced Modification of Aluminum Thin Films into Transparent Aluminum Oxide

“…The F 2 -laser-induced modification has also been observed in silicone for photonic and automotive applications. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The use of the F 2 laser is essential for inducing the photochemical reactions; active oxygen atoms [O( 1 D)] can only be effectively obtained through the photodissociation of O 2 molecules in air. [9][10][11][12][13][14][15][16][18][19][20]24) Strong oxidation reaction can take place on the Al thin film surface with the O( 1 D) atoms to form a thin Al 2 O 3 protective layer.…”

“…[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The use of the F 2 laser is essential for inducing the photochemical reactions; active oxygen atoms [O( 1 D)] can only be effectively obtained through the photodissociation of O 2 molecules in air. [9][10][11][12][13][14][15][16][18][19][20]24) Strong oxidation reaction can take place on the Al thin film surface with the O( 1 D) atoms to form a thin Al 2 O 3 protective layer. However, the strong oxidation does not occur in the case of using a 193 nm ArF excimer laser because O( 1 D) atoms cannot be released from O 2 molecules by ArF excimer laser irradiation.…”