2006
DOI: 10.1016/j.tsf.2005.09.098
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Photochemical conversion of 2,5-diiodothiophene condensed on substrates to oligothiophene and polythiophene thin films and micro-patterns

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Cited by 16 publications
(14 citation statements)
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“…The inability of the infiltrated P3HT to similarly quench PL indicates limitations to charge transfer processes at the TiO 2 /polymer interface, which could result in decreased exciton separation effectiveness. Moreover, UV‐PT has a characteristic PL emission centered near 550 nm when excited at 435 nm19 that is also quenched in this hybrid system. The efficiency of charge transfer between the polymer and the titania is greatly enhanced using in situ polymerization.…”
Section: Resultsmentioning
confidence: 93%
See 1 more Smart Citation
“…The inability of the infiltrated P3HT to similarly quench PL indicates limitations to charge transfer processes at the TiO 2 /polymer interface, which could result in decreased exciton separation effectiveness. Moreover, UV‐PT has a characteristic PL emission centered near 550 nm when excited at 435 nm19 that is also quenched in this hybrid system. The efficiency of charge transfer between the polymer and the titania is greatly enhanced using in situ polymerization.…”
Section: Resultsmentioning
confidence: 93%
“…However, because this method initiates the polymerization at the electrode and not at the oxide surface, it does not address the poor coupling between the oxide and the polymer that affects most infiltration approaches. Solventless direct deposition approaches such as plasma polymerization, laser‐induced chemical vapor deposition, as well as X‐rays, electrons, and ion‐induced synthesis in ultra‐high vacuum (UHV) conditions have also been investigated 19. However, these approaches, in general, do not have enough reaction specificity to generate reactive species without fragmentation of the monomer structure, which results in defect incorporation in the final product.…”
Section: Introductionmentioning
confidence: 99%
“…(1) A heavily n-doped Si substrate acts as the gate electrode with a 300 nm thermally grown SiO 2 layer (Ci ~10 nF/cm 2 ) as the gate dielectric. 6-[allyl-heptadecafluoro-decyl-amino]- [1,3,5] triazine -2,4-dithiol) (DA) thin films were vacuum-deposited on SiO 2 /Si substrate. During deposition, the substrate temperatures were set room temperature (RT) under a base pressure of less than 2×10 -3 Pa. (2) The deposited DA thin films were UV-irradiated through a photomask at ambient conditions.…”
Section: Methodsmentioning
confidence: 99%
“…It has been known that triazine dithiol (DT) derivatives with high thermal stability and reactivity of thiol group could be used for the removal agent of a heavy metal, the bridge construction agent of rubber or a plastic, the adhesives of a metal-plastic or metal-rubber, the metal surface treatment agent (water-repellence, corrosion protection) according to different functional groups, and these films were generally formed by electropolymerization, tribological polymerization or immersion by thermal or photopolymerization by electropolymerization [1][2][3]. A strong bonding with the chemical linkage of the SiO 2 /Si substrate and the Au thin film is enabled to bonding the Au thin film on the SiO 2 /Si substrate improves.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, we have extended the use of iodo-substituted compounds to generation of functional organic molecules or films on surfaces. For example, 2,5-diiodothiophene can be photochemically activated and coupled to produce thin films and micropatterns of oligothiophenes and polythiophenes on metal or oxide surfaces [4][5][6][7][8][9][10][11]. This approach is intriguing since it avoids the intractability problem of the unsubstituted oligothiophenes and polythiophene, i.e.…”
Section: Introductionmentioning
confidence: 99%