Photo-switchable
organic field-effect transistors (OFETs) represent
an important platform for designing memory devices for a diverse array
of products including security (brand-protection, copy-protection,
keyless entry, etc.), credit cards, tickets, and multiple wearable
organic electronics applications. Herein, we present a new concept
by introducing self-assembled monolayers of donor–acceptor
porphyrin–fullerene dyads as light-responsive triggers modulating
the electrical characteristics of OFETs and thus pave the way to the
development of advanced nonvolatile optical memory. The devices demonstrated
wide memory windows, high programming speeds, and long retention times.
Furthermore, we show a remarkable effect of the orientation of the
fullerene–polymer dyads at the dielectric/semiconductor interface
on the device behavior. In particular, the dyads anchored to the dielectric
by the porphyrin part induced a reversible photoelectrical switching
of OFETs, which is characteristic of flash memory elements. On the
contrary, the devices utilizing the dyad anchored by the fullerene
moiety demonstrated irreversible switching, thus operating as read-only
memory (ROM). A mechanism explaining this behavior is proposed using
theoretical DFT calculations. The results suggest the possibility
of revisiting hundreds of known donor–acceptor dyads designed
previously for artificial photosynthesis or other purposes as versatile
optical triggers in advanced OFET-based multibit memory devices for
emerging electronic applications.