Photo Response Enhancement in MIS(p) Tunnel Diode via Coupling Effect by Controlling Neighboring Device Inversion Level

Abstract

The current coupling effect in concentric circle MIS(p) structure was investigated. It is found that the saturation current of the central device could be affected by the distance between two electrodes (S) and the voltage bias (VG) of the nearby device. While the electrode separation and VG change, minority carrier distribution at the fringe of the MIS tunnel diode also changes causing the variation in the saturation current of the central device. In addition, it is also found that by well-controlling VG, the light to dark current ratio Ilight/Idark of the central device could be effectively enhanced. In this study, two intensities of illumination on MIS(p) tunnel diodes were displayed. It is found that the maxima of current ratio Ilight/Idark took place at different values of VG for different intensities of illumination. Coupling effect plays an important role in this phenomenon.

Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes

“…Due to its high sensitivity to the change of minority carriers from the surroundings, MIS(p) shows noticeable results towards light or biasadded neighboring gate in a concentric structure. In previous research of double MIS(p) TDs (3), it was shown that through the coupling effect from the neighboring gate with adequate bias, the dark current of central MIS(p) TD can be lowered and the light current can be improved and therefore an excellent light-to-dark ratio can be achieved.…”