Light Sensing Enhancement and Energy Saving Improvement in Concentric Double-MIS(p) Tunnel Diode Structure With Inner Gate Outer Sensor Operation

Chen, Yu-Hsuan; Hwu, Jenn–Gwo

doi:10.1109/ted.2018.2871071

Cited by 5 publications

(1 citation statement)

References 30 publications

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“…The findings in this work can help to explain this distinct outcome in a thorough way. Besides, the application of the IGOS situation has been published in our previous paper (4). Further studies on the design of the outer ring-to-inner circle area ratio might be important to optimize the usage of the area while maintaining good performance at the same time.…”

Section: Discussionmentioning

confidence: 99%

Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes

Chen

Hwu

2019

ECS Trans.

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During the studies of coupling effects between the outer ring and inner circle in a concentric structure of double-metal-insulator-semiconductor tunnel diode, we have proposed an asymmetric coupling effect to account for the distinctive difference between two opposite operations. However, further investigation is needed to make our mechanism more robust. In this work, we designed two sets of ring-shaped and concentric MIS tunnel diode lithographic patterns with a fixed inner fringe in the first set and a fixed outer fringe in the second set. From both the experimental and TCAD-simulated results, we have found that the major role in grabbing charges is the outer fringe of a ring-shaped MIS structure and that this outer fringe-dominated characteristic accompanied with the asymmetric coupling effect results in the observable difference in two contrary operation modes where the inner circle and outer ring take turns to play as the control gate.

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Section: Discussionmentioning

confidence: 99%

Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes

Chen

Hwu

2019

ECS Trans.

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Role of oxide charges on the voltage and current coupling effects between adjacent devices examined by concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide

Kao,

Huang,

Shih

et al. 2024

Phys. Scr.

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The impacts of positive oxide charges within the silicon oxide (SiO2) layer on the coupling mechanism in metal-insulator-semiconductor (MIS)-coupled devices were studied. By employing the post-metallization annealing (PMA) process, the condition of coupled devices with fewer oxide charges was established. In terms of coupled voltage, the presence of oxide charges facilitated the transmission of gate voltage-induced quasi-Fermi level splitting to neighboring devices, resulting in the induction of coupled voltage. Conversely, with few oxide charges, no coupled voltage was observed at the neighboring device. Additionally, positive oxide charges induced an inversion channel at the silicon surface, fostering the sharing of minority carriers in the conducting channel between adjacent devices. The saturation currents of non-PMA devices were 104 times larger than PMA devices. Less oxide charge will induce less coupling. These mechanisms were validated through TCAD simulations. Furthermore, the impact of oxide charges on photo-sensing was discussed, revealing that oxide charges enhanced the light absorption area and increased photon-induced carriers. However, the PMA devices showed a larger light-to-dark current ratio (>300) due to a smaller dark current.

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Low-Bias Weak Ambient Light Sensor Using Edge-Removed MISIM Device With High Sensitivity

Lin,

Huang,

Lin

et al. 2024

IEEE Sensors J.

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Light Sensing Enhancement and Energy Saving Improvement in Concentric Double-MIS(p) Tunnel Diode Structure With Inner Gate Outer Sensor Operation

Cited by 5 publications

References 30 publications

Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes

Roles of Inner and Outer Fringe and Asymmetric Coupling Effect in Concentric Double-MIS(p) Tunneling Diodes

Role of oxide charges on the voltage and current coupling effects between adjacent devices examined by concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide

Low-Bias Weak Ambient Light Sensor Using Edge-Removed MISIM Device With High Sensitivity

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