Photo-Machining of Semiconductor Related Materials with Femtosecond Laser Ablation and Characterization of Its Properties

Yokotani, Atushi; Mizuno, Toshio; Mukumoto, Toru; Kawahara, Kousuke; Ninomiya, Takahumi; Sawada, Hiroshi; Kurosawa, Kou

doi:10.1541/ieejeiss.124.2267

Cited by 1 publication

(3 citation statements)

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“…Although the accuracy of the results in ref. 27 was not sufficient in the detailed discussion of the phenomena on a time scale of 10 ns, the rise time was observed to be roughly proportional to the thermal conductivity in these materials. In this work, we measured the rise time for more variegated materials that have wide ranging physical properties with a more precise accuracy.…”

Section: Comparison With Other Materialsmentioning

confidence: 95%

“…In ref. 27, the relationships between the rise times and physical properties of four kinds of material (polymer, oxide, semiconductor and metal) were indicated; the rise times were estimated by time-resolved imaging with a gate speed of 5 ns. Although the accuracy of the results in ref.…”

Section: Comparison With Other Materialsmentioning

confidence: 99%

“…7 not only the values from this work, but also the data from ref. 27 are plotted. In low-thermal-conductivity materials such as titanium and iron, the molten wall due to the thermal effect was hardly observed, whereas in the high-thermalconductivity materials such as silver, a large molten wall was observed (approximately 7 mm for the hole diameter of 30 mm).…”

Section: Comparison With Other Materialsmentioning

confidence: 99%

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Time-Resolving Image Analysis of Drilling of Thin Silicon Substrates with Femtosecond Laser Ablation

Yokotani

Mukumoto

Kanamitsu

et al. 2005

Jpn. J. Appl. Phys.

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We have analyzed a drilling process with a femtosecond laser on a silicon surface in order to investigate the degree of the thermal effect during the dicing of a very thin silicon substrate (thickness: 50 µm). A femtosecond laser pulse (E=30–500 µJ/pulse, τ=200 fs, λ=780 nm, f=10 Hz) was focused on a thin silicon substrate using a lens with a focal length of 100 mm. An image-intensified charge-coupled device (CCD) camera with a high-speed gate of 200 ps was utilized to take images of a drilled hole during the drilling process. As a result, it was found that the smaller the pulse energy, the faster the formation of the hole. Therefore, we tried to estimate the degree of the thermal effect semi quantitatively by analyzing the rise time of the formation of the hole. By measuring the rise time in 8 kinds of metallic material, it was found that the rise time strongly correlates with the thermal conductivity in these materials. This knowledge is thought to be very important and useful for developing a dicing technique for thin silicon wafers using a femtosecond laser.

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Section: Comparison With Other Materialsmentioning

confidence: 95%

Section: Comparison With Other Materialsmentioning

confidence: 99%

Section: Comparison With Other Materialsmentioning

confidence: 99%

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