Photo-induced transient thermoelectric effect in MnTe

Wu, G.R.; Nagatomo, Kenji; Sasaki, Minoru; Nagasaki, F.; Sato, Hitoshi; Takeuchi, Masaki; Gao, Wenxiu

doi:10.1016/s0038-1098(01)00119-3

Cited by 18 publications

(5 citation statements)

References 12 publications

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“…Interestingly, in reversal of HMS, MnTe transforms to be metallic when the temperature increased to 673 K and then displayed a drastic σ increase with increasing temperature, which could make a positive contribution for the MnTe/HMS composite at high temperatures. Moreover, the κ tot of MnTe is only about 0.55 Wm –1 K –1 at 773 K, which is about five-times lower than that of HMS. − Thus, it is possible to get a relatively low κ tot as well as to retain the high electrical transport properties when MnTe is incorporated into HMS. Finally, MnTe has good thermal stability, whose melting point (1150 °C) is close to that of HMS (1140 °C), making it possible to coexist with HMS at 1050 °C (SPS temperature to synthesize HMS).…”

Section: Resultsmentioning

confidence: 99%

Significant Enhancement of the Thermoelectric Performance of Higher Manganese Silicide by Incorporating MnTe Nanophase Derived from Te Nanowire

Dong

Sun

et al. 2017

Chem. Mater.

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Higher manganese silicide (HMS) is a naturally abundant, eco-friendly, and low-cost p-type thermoelectric semiconductor with high power factor (PF); however, its figure of merit (ZT) is very low due to an intrinsically high thermal conductivity (κ). It is also difficult to synthesize a HMS single phase without MnSi or Si second phase, which generally leads to a significant decrease of the PF and/or increased κ. In this study, pure HMS was obtained via wet ball milling in combination with spark plasma sintering. A further p-type MnTe, with high Seebeck coefficient (S) and low κ, was incorporated into the HMS matrix to form MnTe/HMS composites. To effectively decrease κ, while simultaneously enhancing the electrical conductivity, Te nanowires of ∼35 nm in diameter were synthesized with a solution phase method and subsequently embedded to HMS to form MnTe/ HMS nano/bulk structures. The incorporation of Te nanowires led to a 38% reduction of κ in addition to a slight increase of S. Finally, the ZT max of MnTe/HMS nano/bulk composites increased by ∼71% from 0.41 to 0.70. This study demonstrates a unique and facile method to boost the ZT of HMS to a high level, which is also applicable to other thermoelectric materials.

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Section: Resultsmentioning

confidence: 99%

Significant Enhancement of the Thermoelectric Performance of Higher Manganese Silicide by Incorporating MnTe Nanophase Derived from Te Nanowire

Dong

Sun

et al. 2017

Chem. Mater.

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“…During the past few days manganese chalcogenide (MnS, MnSe, MnTe, etc.) have been of much interest concerning their structural, chemical, and physical properties . Depending upon the deposition conditions, the structural, electrical ,and optical properties of these materials can be controlled in many ways .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Sonavane¹,

Jare²,

Shaikh³

et al. 2019

Macromolecular Symposia

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Pure and Pb‐doped MnS thin films are prepared by chemical bath deposition (CBD) method onto glass substrates at 60 °C temperature. The films are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X‐ray analysis, and optical absorption spectroscopy. The particle size of the crystalline is determined from the XRD patterns using Scherrer formula and is 47 nm for MnS thin films. The particle size shows a change in the case of the Pb‐doped film. The optical band gap of MnS thin film is found to be 3.1 eV, which decreases on doping with Pb. SEM graphs of doping of Pb in MnS confirmed the formation of spherical superstructure and indicate that the Pb2+ is successfully substituted into the MnS host structure of the Mn2+ site.

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“…have given much interest concerning to their structural, chemical and physical properties [1][2][3]. Among these manganese compounds, MnS belongs to the family of diluted magnetic semiconductor (DMS) and has been extensively studied because of outstanding magneto-optical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

Chowdhury

Podder

Islam

2011

Cryst. Res. Technol.

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Manganese sulphide (MnS) thin films have been deposited onto glass substrate by a low cost spray-pyrolysis technique at 220 °C. The as-deposited MnS thin films have been characterized using scanning electron microscopy (SEM), energy dispersive X-ray (EDX) spectroscopy, atomic force microscopy (AFM), X-ray diffraction, UV visible spectroscopy and photo electrochemical (PEC) measurement. The SEM and AFM images showed that the MnS thin films were well covered onto the substrate surface. The as-deposited raw thin film was found to be amorphous in nature and perfectly crystalline phase after annealing the sample. Optical band gap of the MnS thin films was found to vary from 3.1 to 3.21 eV and the band gap decreases with the increase in film thickness. Optical constants such as refractive index, extinction coefficient have been evaluated using reflectance and absorbance data.

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Photo-induced transient thermoelectric effect in MnTe

Cited by 18 publications

References 12 publications

Significant Enhancement of the Thermoelectric Performance of Higher Manganese Silicide by Incorporating MnTe Nanophase Derived from Te Nanowire

Significant Enhancement of the Thermoelectric Performance of Higher Manganese Silicide by Incorporating MnTe Nanophase Derived from Te Nanowire

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

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