A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu 2-x Se thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu 2-x Se films annealed at 523K suggests a cubic structure with a lattice constant of 5.697Å. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as-deposited and annealed films show very low resistivity in the range of (0.

A Si͑111͒:GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7ϫ7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1ϫ1:GaSe surface remains with electronic surface potentials near flatband condition.

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Cadmium sulfide (CdS) thin films have been deposited on glass/conducting glass substrates using low-cost chemical bath deposition method. The deposited films have been characterized using various techniques in order to optimize growth parameters. It has been confirmed by X-ray diffraction measurement that the deposited layers are mainly consisting of CdS phase. The PEC measurements indicate that the deposited CdS layer is n-type in electrical conduction, and optical absorbance measurements show that the band gap is 2.42 eV for as-deposited film and 2.27 eV upon heat treatment for one hour in air ambient. Both atomic force microscopy and scanning electron microscopy measurements indicate the formation of pinhole free and smooth surface of CdS films of nanosized grains. The electrical resistivity is also observed in the order of 1044 Ω cm and decreases as temperature increases.