Photo-induced defects in amorphous thin films of Se70Te22Zn8

Yadav, S.; Sharma, Suresh Kumar; Kumar, Anjani

doi:10.1016/j.physb.2010.01.058

Cited by 3 publications

(4 citation statements)

References 28 publications

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“…Numerous potential applications of chalcogenide glasses are proposed in the civil, medical and military areas [1][2][3][4][5][6]. It is possible to produce electrical switches, xerographic and thermoplastic media, photoresistant and holographic media, optical filters, optical sensors, thin films, waveguides, non-linear elements, etc.…”

Section: Introductionmentioning

confidence: 99%

“…It is possible to produce electrical switches, xerographic and thermoplastic media, photoresistant and holographic media, optical filters, optical sensors, thin films, waveguides, non-linear elements, etc. [1][2][3][4][5][6]. It has been found that Se-based alloys are more useful compared to pure Se, due to their greater hardness, high photosensitivity, higher crystallization temperature and smaller aging effect compared to pure a-Se [7].…”

Section: Introductionmentioning

confidence: 99%

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A comparative study of the density of defect states in bulk samples and thin films of glassy Se90Sb10

2016

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The present paper reports the comparative study of density of defect states (DOS) between bulk samples and thin films of glassy Se 90 Sb 10 . These glasses have been prepared by the quenching technique. Thin films of these glasses have been prepared by vacuum evaporation technique. Space-charge-limited conduction (SCLC) has been measured at different temperatures. The density of localized states near Fermi level is calculated by fitting the data to the theory of SCLC for the case of uniform distribution of localized states for bulk as well as for thin films. A comparison has been made between the density of states calculated in these two cases.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A comparative study of the density of defect states in bulk samples and thin films of glassy Se90Sb10

2016

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“…Efforts have been made for the development of new erasable optical storage media based on chalcogenide glasses. Chalcogenide thin films show a wide range of photo-induced properties which can be used as optical imaging and other storage devices [1,2]. Interestingly, the reversible photo bleaching or photo darkening is one of the interesting phenomena in chalcogenide thin film upon light exposure.…”

Section: Introductionmentioning

confidence: 99%

“…The other stage seems to begin after 1995 with issues namely commercialization of DVDs (digital versatile discs), amorphous Se photo conducting devices, broad studies on nonlinear optical properties, and discoveries of photo-induced macroscopic deformations. The work on crystallization phenomena by light illumination in chalcogenide thin films has been done by various researchers [1][2][3][4][5][6][7] and demonstrated that the light illumination increases the crystallization, while some time it squeezes the crystallization. It has established that with large exposure of illumination time, the white light induces crystallization in Se-Te thin film [8].…”

Section: Introductionmentioning

confidence: 99%

A study on photo-induced crystallization in Ga10Se78Tl12 thin films

Tripathi

Akhtar

Alvi

et al. 2015

J Mater Sci: Mater Electron

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This paper reports the photo-induced crystallization in glassy Ga 10 Se 78 Tl 12 thin films. The glassy nature of the bulk material was confirmed by non-isothermal differential scanning calorimetry measurements. The photo-induced crystallization in Ga 10 Se 78 Tl 12 films was done by exposing to light (using 2000 W tungsten lamp) at various illumination times under the fixed ambient temperature at 358 K. Virgin and photo-induced Ga 10 Se 78 Tl 1 thin films were characterized by X-rays diffraction, scanning electron microscopy, optical and electrical measurements. The photo-induced crystallization is associated to the change in structure of Ga 10 Se 78 Tl 12 thin films which initiated the significant change in the optical constants. The detailed examination of the optical absorption results indicated that the optical transition was indirect. The optical band gap of Ga 10 Se 78 Tl 12 thin films were decreased while the absorption and the extinction coefficients increased with the increase of illumination time. From dark conductivity results, the dark conductivities of thin films continuously heightened and the activation energy turned to be lower as increasing the illumination time. The lowering in optical band gap and activation energy might be due to the occurrence of photo crystallization with the increment of illumination time.

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