Phosphorus Vacancy as a Deep Level in AlInP Layers

Sung, Wei Jer; Wu, Yu Rue; Lee, Shih Chang; Wen, T. C.; Li, Tsang Jou; Chang, Jung Ting; Lee, Wei-I

doi:10.1143/jjap.39.l567

Cited by 3 publications

(2 citation statements)

References 13 publications

(15 reference statements)

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“…The Sparameter implies that n-AlInP could involve a density of defects (D s ), including surface states, point defects, 40 carbon and oxygen impurities, 41 and P vacancy. 42 Further, in GaP, metal-induced-gapstates (MIGS) were observed to contribute to the pinning. 43 Thus, the combined effects of them may be responsible for the partial surface Fermi level pinning.…”

Section: Resultsmentioning

confidence: 99%

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Cha¹,

Lee²,

Sim³

et al. 2022

ECS J. Solid State Sci. Technol.

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For micro-light-emitting diode (LED)-based display applications, such as virtual reality and augmented reality, high-performance Ohmic contacts (namely, the improvement of current injection efficiency) is vital to the realization of high-efficiency micro-LEDs. The surface Fermi level pinning characteristics could be comprehended in terms of the relation between work function of metals (ΦM) and Schottky barrier height (SBH, ΦB). In this study, we have investigated the surface Fermi level pinning characteristics of (001) n-AlInP surfaces by employing Schottky diodes with different metals. With an increase in the temperature, ΦB increases linearly and ideality factors (n) decreases. This behavior is related to the barrier height inhomogeneity. Inhomogeneity-model-based ΦB is evaluated to be in the range of 0.86 – 1.30 eV, which is dependent on the metal work functions and are similar to those measured from capacitance-voltage relation. Further, The S-parameter, the relation between B and M (dB/dM), is 0.36. This is indicative of the partial pinning of the surface Fermi level at the surface states placed at 0.95 eV below the conduction band. Furthermore, it is also shown that (NH4)2S-passivation results in an increases the mean SBH and the S-parameter (e.g., 0.52).

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Section: Resultsmentioning

confidence: 99%

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Cha¹,

Lee²,

Sim³

et al. 2022

ECS J. Solid State Sci. Technol.

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show abstract

“…Despite the well-established increase in ordering with growth temperature, ordering is a surfacestable phenomenon that is less stable in the bulk crystal; therefore, the degree of ordering in AlInP decreases with annealing. 31,32 The increase in the 1.8-2.1 V, or Al-O emission relative to AlInP ͑Fig. 25 That the broad ϳ1.8-2.1 eV ͑line scan at 1.98 eV͒ feature is in constant proportion to the AlInP emission, and is not enhanced at the AlInP / GaAs interfaces ͑Fig.…”

Section: Discussionmentioning

confidence: 99%

Atomic diffusion and electronic structure in Al0.52In0.48P∕GaAs heterostructures

Smith

Lueck

Ringel

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In order to investigate the relationship between atomic diffusion and electronic structure in the epitaxial AlInP / GaAs system, the authors have performed cross-sectional cathodoluminescence spectroscopy and secondary ion mass spectrometry measurements of a SiO x -capped, lattice-matched Al 0.52 In 0.48 P / GaAs double heterostructure. The authors measure atomic diffusion of over 100 nm resulting from annealings ranging from 650 to 850°C. An ϳ40 meV increase in the emission energy of AlInP is observed after the highest temperature annealings. This increase is consistent with an increase in the Ga concentration of the ternary layer at the expense of In, and as a result of diffusion from neighboring GaAs layers. Additionally, the authors observe a broad, AlInP-localized feature at ϳ1.98 eV. The intensity of this emission relative to the AlInP band-edge emission depends sensitively on the annealing temperature and, therefore, the amount of cross diffusion, and corresponds well energetically to literature reports of P vacancies. These results clarify cross diffusion and defect emission in AlInP / GaAs, and demonstrate that these effects can have a significant impact on the electronic structure of lattice-matched III-V heterostructures.

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Al-In-P (Aluminium-Indium-Phosphorus)

2006

Landolt-Börnstein - Group IV Physical Chemistry

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Phosphorus Vacancy as a Deep Level in AlInP Layers

Cited by 3 publications

References 13 publications

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Atomic diffusion and electronic structure in Al0.52In0.48P∕GaAs heterostructures

Al-In-P (Aluminium-Indium-Phosphorus)

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